SinoGreenTech Academic Portal
HW
Verified CAS / Academic Author2 Decoded Studies

Prof. Hongyang Wang

Institute of Chemistry, Chinese Academy of Sciences

Research Publications & English Decoded Briefs

Showing 2 publications
SCIENCE CHINA Materials2026DOI: 10.1007/s40843-026-4505-9

Ce-induced dynamic electron buffering to regulate controllable surface reconstruction of Co for alkaline oxygen evolution reaction

Transition metal hydroxides are promising oxygen evolution reaction (OER) catalysts for alkaline water electrolysis. This study reports Ce-doped Co(OH)2 electrocatalysts synthesized via one-step electrodeposition, where the Ce3+/Ce4+ ratio is precisely controlled by deposition temperature. The optimized Ce-Co(OH)2 catalyst, obtained at 40°C, exhibits an overpotential of 236 mV at 10 mA cm-2 and maintains stability for 200 h. In an anion-exchange membrane water electrolyzer (AEMWE), the Ce-Co(OH)2 anode achieves a cell voltage of 2.04 V at 1 A cm-2 and operates for over 500 h at 500 mA cm-2. Mechanistic analysis reveals that Ce3+/Ce4+ dynamic electron buffering regulates surface reconstruction: during OER, electron transfer direction reverses (Ce → O → Co), with Ce donating electrons to Co sites to prevent over-oxidation and structural collapse. This work establishes a versatile strategy for balancing surface reconstruction and structural stability in Co-based OER catalysts, providing a foundation for designing high-performance, durable alkaline water oxidation electrocatalysts.

SCIENCE CHINA Materials2025DOI: 10.1007/s40843-025-3370-8

All-solution-processed organic field-effect transistors with low contact resistance via interface engineering for high-performance flexible circuits

Solution-processed organic field-effect transistors (OFETs) offer a low-cost route to flexible electronics, but their performance is often limited by high contact resistance arising from interfacial incompatibility between solution-deposited electrodes and organic semiconductors. This study addresses that bottleneck by inserting a multifunctional poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) buffer layer at the Ag/semiconductor interface in all-solution-processed OFETs. The buffer layer reduces the Schottky barrier and provides favorable affinity with Ag, enabling hybrid PEDOT:PSS/Ag electrode patterns. Using the p-type semiconductor PDVT-10, the optimized devices achieve a low contact resistance of 789 Ω cm, an average mobility of 10.5 cm2 V−1 s−1, and exceptional operational and bending stability. A pseudo-complementary inverter built entirely from solution-processed components exhibits a voltage gain exceeding 260. These results demonstrate that interface engineering with PEDOT:PSS can overcome the contact-resistance limitation of all-solution-processed OFETs, enabling high-performance flexible circuits at reduced cost.