All-solution-processed organic field-effect transistors with low contact resistance via interface engineering for high-performance flexible circuits

• • Contact resistance of 789 Ω cm achieved in all-solution-processed PDVT-10 OFETs, a value competitive with vacuum-deposited devices, directly enabling higher-frequency operation and reduced power dissipation in flexible circuits. • • Average mobility of 10.5 cm2 V−1 s−1 realized, surpassing typical solution-processed OFETs and approaching single-crystal silicon levels, which translates to faster switching speeds for printed logic. • • Pseudo-complementary inverter with voltage gain >260, sufficient for robust digital signal processing in flexible electronics, indicating that the buffer-layer approach supports complex circuit integration. • • Exceptional operational and bending stability demonstrated, with minimal degradation under mechanical stress, addressing a critical reliability barrier for wearable and conformable applications.