Key Takeaways & Executive Findings
- •• • The ultrasonic vibration cold manufacturing process operates at a low pressure of ~16 MPa and room temperature, reducing the applied pressure by 200–500 times and the required temperature to only 20% of that used in conventional high-temperature high-pressure sintering (HTHP), enabling energy-efficient and rapid fabrication within seconds. • • The resulting Cu/Diamond composite achieves a high yield strength of 150 MPa, attributed to direct metallurgical bonding between Cu particles and solid embedding of diamond, ensuring mechanical integrity for demanding thermal management applications. • • With a maximum diamond proportion of ~60%, the composite exhibits a thermal conductivity exceeding 1043 W/(m·K) and a coefficient of thermal expansion below 10×10⁻⁶ K⁻¹, meeting the stringent requirements for heat dissipation in high-power electronics. • • The method's flexibility allows fabrication of composites with complex shapes, and heat dissipation tests show superior thermal management performance compared to commercial Al₂O₃ and AlN, demonstrating its practical applicability and potential for industrial scale-up.
Abstract
The escalating thermal management demands of modern electronics necessitate materials with superior thermal conductivity and matched thermal expansion. Cu/Diamond composites are promising, yet their fabrication typically requires extreme conditions (high temperature/pressure) or complex coating processes. This work introduces a one-step, heat-source-free cold manufacturing method using ultrasonic vibration to consolidate Cu/Diamond composites at room temperature and a low pressure of ~16 MPa within seconds. The applied pressure is reduced by 200–500 times, and the required temperature is only 20% of that used in conventional high-temperature high-pressure sintering. Direct metallurgical bonding at Cu-Cu interfaces and solid embedding of diamond particles in the Cu matrix are achieved, yielding a composite with a high yield strength of 150 MPa. The method enables a maximum diamond proportion of ~60%, resulting in a thermal conductivity exceeding 1043 W/(m·K) and a coefficient of thermal expansion below 10×10⁻⁶ K⁻¹. Complex shapes are readily fabricated, and heat dissipation tests demonstrate superior performance compared to commercial Al₂O₃ and AlN substrates. The loose preparation conditions and rapid processing confer significant industrial production potential.
1. Introduction
The relentless miniaturization and performance escalation of electronic components, following Moore's law, have intensified the challenge of thermal management. Crystalline silicon, the foundational material for integrated circuits, possesses a thermal conductivity of only 150 W/(m·K), which is insufficient to dissipate the heat generated by densely packed transistors. Without effective heat spreading, localized hotspots can degrade performance and compromise device reliability. Consequently, thermal management materials must exhibit high thermal conductivity to efficiently channel heat away from sensitive components. Diamond, with a thermal conductivity of 1200–2500 W/(m·K), stands as the ultimate heat conductor, yet its extreme hardness and brittleness render it difficult to machine into functional heat sinks, and its high cost precludes widespread adoption.
Metal/diamond composites, particularly those with a copper matrix, offer a pragmatic solution by combining diamond's exceptional thermal conductivity with copper's processability and relatively low coefficient of thermal expansion (CTE), which closely matches that of diamond. However, conventional fabrication routes, such as high-temperature high-pressure sintering (HTHP) or powder metallurgy with carbide-forming coatings, impose severe constraints: they require temperatures exceeding 1000°C and pressures in the gigapascal range, or involve complex, time-consuming coating steps to promote interfacial bonding. These stringent conditions escalate energy consumption, limit throughput, and hinder the production of intricate geometries. The present work circumvents these bottlenecks by employing ultrasonic vibration to induce localized plastic deformation and metallurgical bonding at ambient temperature and a mere 16 MPa pressure. This cold manufacturing approach not only slashes energy and pressure requirements by orders of magnitude but also achieves direct Cu-Cu bonding and mechanical interlocking of diamond particles, yielding composites with high thermal conductivity and low CTE, all within seconds. This innovation paves the way for scalable, cost-effective production of high-performance thermal management materials.
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Boyang Wu, Bangliang Cao, Xiangyang Yu, Yu Zhang, Zixian Zhao, Wenzhe Bao, Jianhuan Shao, Degui Yu, Jie Dong, Xiaodi Liu, Jiang Ma (2026). Ultrasonic vibration enabled cold manufacturing of high thermal conductive Cu/Diamond composites. SCIENCE CHINA Materials. https://doi.org/10.1007/s40843-025-4028-5
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Frequently Asked Questions
What is the maximum diamond volume fraction achievable with this ultrasonic vibration method, and how does it affect the composite's thermal conductivity?
The method can incorporate up to ~60% diamond by volume. At this maximum loading, the composite exhibits a thermal conductivity exceeding 1043 W/(m·K), which is competitive with or superior to composites produced by conventional high-temperature high-pressure sintering, while maintaining a low coefficient of thermal expansion below 10×10⁻⁶ K⁻¹.
How does the yield strength of 150 MPa compare to Cu/Diamond composites fabricated by other methods, and what are the implications for mechanical reliability?
The yield strength of 150 MPa is notably high for a composite with 60% diamond content, indicating strong interfacial bonding and effective load transfer. This mechanical robustness is critical for applications subjected to thermal cycling and mechanical stress, ensuring long-term reliability.
What are the scalability and cost implications of this cold manufacturing process compared to conventional HTHP sintering?
The process operates at room temperature and a pressure of ~16 MPa, which is 200–500 times lower than HTHP methods. This drastically reduces energy consumption and equipment costs. Additionally, the fabrication time is on the order of seconds, enabling high-throughput production. The elimination of complex coating steps further simplifies the manufacturing chain, making the process highly attractive for industrial scale-up.
Can this method produce composites with complex geometries, and what is the demonstrated thermal management performance?
Yes, the method is flexible and can fabricate composites of various complex shapes, as demonstrated in the study. Heat dissipation tests show that the Cu/Diamond composite outperforms commercial Al₂O₃ and AlN substrates, indicating its superior thermal management capability for high-power electronic devices.
What is the mechanism behind the direct metallurgical bonding between Cu particles and the embedding of diamond, and how does it influence thermal and mechanical properties?
Ultrasonic vibration induces high-frequency localized plastic deformation at particle contacts, promoting atomic diffusion and metallurgical bonding between Cu particles. Diamond particles are mechanically embedded in the softened Cu matrix, creating a strong interfacial contact. This direct bonding minimizes interfacial thermal resistance, enhancing thermal conductivity, while the mechanical interlocking contributes to the high yield strength.
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