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Open AccessDOI: 10.1007/s40843-025-3435-3Original Research

Optoelectronic interconnection applications from growth-based monolithic in-plane integration of CsPbBr3 nanowire arrays with CdSSe nanoribbon trunks

Hunan University

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Optoelectronic interconnection applications from growth-based monolithic in-plane integration of CsPbBr3 nanowire arrays with CdSSe nanoribbon trunks
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Published In
SCIENCE CHINA Materials
Published:January 15, 2025Edition:Vol. 68, Issue 8 • pp. 100-112Citation:Xue Xia et al. (2025), SCIENCE CHINA Materials
Impact Factor3.5 (Q2 Scopus)
Source Journal中国科学: 材料

Key Takeaways & Executive Findings

  • • • On/off ratio of 8.3×10^3 at 37.5 μm separation between CsPbBr3 NW and CdSSe PD, enabling high-contrast optical interconnects for chip-scale photonic circuits. • • Pulsed light excitation distinguishable below 2000 Hz, limited by PD response speed, indicating a maximum data rate of ~2 kbps for this proof-of-concept system. • • Growth-based monolithic in-plane integration achieved via vapor deposition, eliminating flip-chip or wafer bonding steps and reducing alignment complexity for heterogeneous photonic integration. • • CsPbBr3 NW arrays act as both light source and waveguide, while CdSSe ribbon serves as PD, demonstrating multifunctional component integration on mica substrates for flexible optoelectronics.
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Abstract

Semiconductor nanowires (NWs) have been extensively applied in light sources, waveguides, and photodetectors (PDs), providing abundant components for optoelectronic interconnection applications. However, the efficient in-plane integration of various devices remains challenging, which is a prerequisite for the practical application of NWs. Here, the growth-based integration of CsPbBr3 NW arrays with CdSSe ribbons transferred onto mica is achieved via a vapor deposition route. The transferred ribbons not only act as preferential nucleation sites for CsPbBr3, but also break the growth symmetry of CsPbBr3 NWs on mica, allowing wires with the largest angle to the ribbon edge to grow longer and form arrays. The waveguide studies show that the CsPbBr3 NW arrays can confine and guide the light emission from both themselves and the CdSSe ribbon well. Importantly, the optoelectronic interconnection was successfully demonstrated based on the achieved heterostructures, where the CsPbBr3 NWs served as the light source and waveguide, and PDs were made from the CdSSe ribbon. When a single CsPbBr3 NW was illuminated by a focused 457 nm laser at a distance of 37.5 μm from the CdSSe ribbon, the on/off ratio of the system reached 8.3×10^3, resulting from the efficient response of the PD to the guided light. Moreover, the system can distinguish the pulsed light excitation well below 2000 Hz, limited by the response speed of the PDs. This work paves the way for the on-chip integration of nanoscale light emitters, waveguides, and detectors, promoting the practical application of semiconductor NWs in photonic circuits.

1. Introduction

Silicon-based electronic integrated circuits (ICs) face fundamental performance limits as device scaling approaches physical constraints, while photonic chips promise higher speed and lower energy consumption for data transmission. However, silicon's indirect bandgap prevents efficient light emission, forcing hybrid integration with III–V semiconductors or 2D materials. Lattice mismatch between III–V materials and silicon necessitates flip-chip or wafer bonding, where active and passive components are prefabricated separately, introducing alignment challenges and limiting integration density. Emerging 2D semiconductors enable growth-based integration via van der Waals interactions, but the lack of efficient in-plane heterogeneous integration of nanowire-based light sources, waveguides, and detectors remains a critical bottleneck for practical photonic circuits.

This work addresses the integration bottleneck by demonstrating growth-based monolithic in-plane integration of CsPbBr3 nanowire arrays with CdSSe nanoribbon trunks on mica. The transferred CdSSe ribbons serve as preferential nucleation sites and break the growth symmetry of CsPbBr3 NWs, directing the formation of ordered arrays. The resulting heterostructures exhibit efficient waveguiding and optoelectronic interconnection, with the CsPbBr3 NWs acting as light source and waveguide, and the CdSSe ribbon functioning as a photodetector. The system achieves an on/off ratio of 8.3×10^3 at a separation of 37.5 μm and can distinguish pulsed light below 2000 Hz, providing a scalable route for on-chip integration of nanoscale emitters, waveguides, and detectors.

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Cite This Research Paper
Xue Xia, Long Chen, Yaonan Xiong, Qi Deng, Wei Mou, Junxin Gong, Wenbin Zhang, Shulin Chen, Qinglin Zhang (2025). Optoelectronic interconnection applications from growth-based monolithic in-plane integration of CsPbBr3 nanowire arrays with CdSSe nanoribbon trunks. SCIENCE CHINA Materials. https://doi.org/10.1007/s40843-025-3435-3
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Frequently Asked Questions

What is the maximum data rate achievable with this optoelectronic interconnection system, and what limits it?

The system can distinguish pulsed light excitation well below 2000 Hz, corresponding to a maximum data rate of approximately 2 kbps. This limit is imposed by the response speed of the CdSSe ribbon photodetector, not by the CsPbBr3 nanowire light source or waveguide. Improving the PD response time, for example by optimizing electrode geometry or reducing trap states, could increase the data rate.

How does the on/off ratio of 8.3×10^3 compare to existing integrated photodetector systems, and what is its significance?

An on/off ratio of 8.3×10^3 at a separation of 37.5 μm is competitive with many nanoscale photodetector systems, where ratios typically range from 10^2 to 10^4. This high ratio indicates efficient light guiding from the CsPbBr3 nanowire to the CdSSe ribbon and low dark current in the PD, enabling reliable signal discrimination for optical interconnects. It demonstrates the viability of the heterostructure for high-contrast photonic circuits.

What are the primary failure mechanisms under continuous operation or environmental stress?

The paper does not report accelerated aging tests, but potential failure mechanisms include degradation of CsPbBr3 due to moisture and oxygen, and fatigue of the mica substrate under bending. The CdSSe ribbon may also suffer from photo-induced degradation. For practical deployment, encapsulation and hermetic sealing would be required to mitigate these effects. The on/off ratio and response speed were measured under ambient conditions, but long-term stability data are lacking.

What are the scalability bottlenecks for manufacturing this growth-based integration process?

The vapor deposition route for growing CsPbBr3 nanowire arrays on transferred CdSSe ribbons is inherently scalable in terms of substrate size, but precise control over ribbon placement and nanowire alignment over large areas remains challenging. The process requires a two-step transfer and growth sequence, which may introduce defects and limit yield. Additionally, the use of mica substrates restricts compatibility with standard silicon fabrication lines, necessitating heterogeneous integration strategies.

How does the cost of this approach compare to conventional flip-chip integration of III–V devices on silicon?

The growth-based monolithic integration eliminates the need for flip-chip bonding or wafer bonding, which are capital-intensive and have low throughput. By using solution-processed or vapor-deposited materials, the material cost is potentially lower than III–V epitaxy. However, the overall cost depends on yield and scalability; current laboratory-scale demonstrations do not provide cost parity data. For commercial viability, the process must achieve high uniformity and reproducibility over large areas.

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