Optoelectronic interconnection applications from growth-based monolithic in-plane integration of CsPbBr3 nanowire arrays with CdSSe nanoribbon trunks

• • On/off ratio of 8.3×10^3 at 37.5 μm separation between CsPbBr3 NW and CdSSe PD, enabling high-contrast optical interconnects for chip-scale photonic circuits. • • Pulsed light excitation distinguishable below 2000 Hz, limited by PD response speed, indicating a maximum data rate of ~2 kbps for this proof-of-concept system. • • Growth-based monolithic in-plane integration achieved via vapor deposition, eliminating flip-chip or wafer bonding steps and reducing alignment complexity for heterogeneous photonic integration. • • CsPbBr3 NW arrays act as both light source and waveguide, while CdSSe ribbon serves as PD, demonstrating multifunctional component integration on mica substrates for flexible optoelectronics.