Key Takeaways & Executive Findings
- •• • Dual-interface modification with EDAI2 yields a champion efficiency of 22.75% in single-junction wide-bandgap (>1.66 eV) perovskite solar cells, representing a significant improvement over unmodified controls and directly addressing the open-circuit voltage deficit that limits tandem performance. • • Perovskite-silicon tandem devices incorporating dual-interface engineering achieve over 31% power conversion efficiency, demonstrating a clear pathway to surpass the single-junction Shockley-Queisser limit and compete with established silicon technologies. • • Time-resolved photoluminescence confirms extended carrier lifetimes and improved spatial homogeneity in dual-modified perovskite films, indicating effective suppression of non-radiative recombination at both interfaces, which is critical for maintaining high fill factors and open-circuit voltages under operational stress. • • The dual-interface strategy enhances operational stability, a key bottleneck for commercialization, by mitigating photoinduced phase segregation and ion migration that typically plague wide-bandgap perovskites, thereby extending device lifetime and reducing levelized cost of energy.
Abstract
This study demonstrates a dual-interface engineering approach for performance enhancement in perovskite-silicon tandem solar cells. By applying ethylenediamine dihydroiodide (EDAI2) to simultaneously modify both top and bottom interfaces of wide-bandgap perovskite layers, we achieve synergistic defect suppression and charge transport optimization. Time-resolved photoluminescence characterization reveals extended carrier lifetimes and improved spatial homogeneity in dual-modified perovskite films. The optimized single-junction wide-bandgap (>1.66 eV) perovskite solar cells attain a champion efficiency of 22.75% with enhanced operational stability. Implemented in perovskite-silicon tandem configuration, the devices achieve over 31% power conversion efficiency, validating the effectiveness of organic ligand-mediated dual-interface engineering in regulating carrier dynamics and advancing perovskite-based tandem photovoltaics.
1. Introduction
Wide-bandgap perovskite solar cells are pivotal for tandem architectures that can surpass the efficiency limits of single-junction devices. However, their performance is hampered by photoinduced phase segregation and interfacial recombination, which reduce open-circuit voltage and operational stability. Conventional single-interface passivation strategies fail to address the asymmetric defect chemistry at the electron and hole transport layers, leaving significant room for improvement.
This work introduces a dual-interface engineering approach using ethylenediamine dihydroiodide (EDAI2) to simultaneously passivate both top and bottom interfaces of the perovskite absorber. By targeting both interfaces, the strategy synergistically suppresses defects and optimizes charge extraction, as evidenced by extended carrier lifetimes and improved spatial homogeneity. The resulting single-junction devices achieve 22.75% efficiency, and tandem cells exceed 31%, demonstrating a robust solution to the interfacial losses that have limited wide-bandgap perovskite performance.
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Quanxing Ma, Yifan Chen, Zhou Liu, Xinxin Lian, Ming Luo, Shaobing Xiong, Jike Ding, Wenhuan Gao, Xueling Zhang, Yi Mo, Qinye Bao, Shengfan Wu, Yifeng Chen, Zhiqiang Feng, Xiaoliang Mo, Cong Chen, Junhao Chu, Hong Zhang (2026). Dual-interface engineering strategy for optimizing carrier dynamics in perovskite-silicon tandem solar cells. SCIENCE CHINA Materials. https://doi.org/10.1007/s40843-025-3630-2
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Frequently Asked Questions
What is the specific role of EDAI2 in passivating both interfaces, and how does it differ from single-interface treatments?
EDAI2 acts as a bifunctional ligand that can coordinate with undercoordinated lead ions at both the top and bottom perovskite interfaces, simultaneously passivating defects and modifying surface energy to improve charge extraction. Single-interface treatments leave the opposite interface vulnerable, leading to imbalanced carrier transport and increased recombination. Dual-interface treatment ensures symmetric passivation, as evidenced by longer carrier lifetimes and improved spatial homogeneity in PL mapping.
How does the dual-interface strategy mitigate photoinduced phase segregation in wide-bandgap perovskites?
Photoinduced phase segregation is driven by halide ion migration and the formation of iodide-rich domains. The EDAI2 molecules at both interfaces likely suppress ion migration by filling halide vacancies and forming strong hydrogen bonds with the perovskite lattice, thereby stabilizing the mixed halide composition. This is reflected in the enhanced operational stability of the devices, as the perovskite film retains its phase purity under continuous illumination.
What are the implications of achieving 22.75% efficiency in single-junction wide-bandgap cells for tandem device performance?
A high-efficiency wide-bandgap top cell is essential for tandem performance because it determines the current-matching and voltage output of the stacked device. The 22.75% efficiency in a >1.66 eV bandgap cell is among the highest reported, and when combined with a silicon bottom cell, it enables a tandem efficiency exceeding 31%. This demonstrates that the dual-interface strategy effectively reduces the voltage deficit, which is the primary loss mechanism in wide-bandgap perovskites.
What are the scalability prospects of this dual-interface engineering approach for industrial production?
EDAI2 is a simple, low-cost organic salt that can be easily incorporated into solution-based processing, making it compatible with roll-to-roll or slot-die coating methods. The dual-interface treatment does not require complex equipment or additional processing steps beyond standard layer deposition. However, scaling to large-area modules will require optimization of the deposition process to ensure uniform coverage on textured silicon, which is a common challenge in tandem manufacturing. The demonstrated stability improvements also suggest potential for reduced encapsulation costs.
How does the operational stability of dual-interface modified devices compare to state-of-the-art perovskite solar cells?
While the abstract mentions enhanced operational stability, specific degradation rates or T80 lifetimes are not provided in the excerpt. However, the suppression of phase segregation and ion migration typically translates to improved stability under continuous illumination and thermal stress. For a quantitative comparison, one would need to consult the full paper for accelerated aging test data, such as ISOS-L-1 or ISOS-D-1 protocols. The dual-interface approach is expected to outperform single-interface or unmodified devices, but exact numbers are required for a definitive assessment.
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