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Verified CAS / Academic Author2 Decoded Studies

Prof. Junhao Chu

Fudan University

Co-Affiliations:Chinese Academy of Sciences

Research Publications & English Decoded Briefs

Showing 2 publications
SCIENCE CHINA Materials2026DOI: 10.1007/s40843-025-3630-2

Dual-interface engineering strategy for optimizing carrier dynamics in perovskite-silicon tandem solar cells

This study demonstrates a dual-interface engineering approach for performance enhancement in perovskite-silicon tandem solar cells. By applying ethylenediamine dihydroiodide (EDAI2) to simultaneously modify both top and bottom interfaces of wide-bandgap perovskite layers, we achieve synergistic defect suppression and charge transport optimization. Time-resolved photoluminescence characterization reveals extended carrier lifetimes and improved spatial homogeneity in dual-modified perovskite films. The optimized single-junction wide-bandgap (>1.66 eV) perovskite solar cells attain a champion efficiency of 22.75% with enhanced operational stability. Implemented in perovskite-silicon tandem configuration, the devices achieve over 31% power conversion efficiency, validating the effectiveness of organic ligand-mediated dual-interface engineering in regulating carrier dynamics and advancing perovskite-based tandem photovoltaics.

SCIENCE CHINA Materials2026DOI: 10.1007/s40843-025-4173-x

Why Are Some Special Ferroelectrics Immune to the Depolarization Field?

Ferroelectric memory, with its promise of low power consumption, high writing speed and exceptional endurance, requires the scaling of ferroelectric films to ultrathin dimensions—often just a few atomic layers thick. However, such extreme thinning risks destabilizing or even erasing electric polarization, mainly due to the detrimental depolarization field. Remarkably, certain ferroelectrics exhibit an intrinsic immunity to this effect, as predicted theoretically and confirmed experimentally. Examples include improper ferroelectrics, hyper ferroelectrics, engineered heterostructures, and low-dimensional van der Waals ferroelectrics. This review systematically examines these unique materials, unravelling the fundamental physics behind their polarization robustness and the mechanisms enabling them to resist the depolarization field. By bridging theory with experimental advances, we aim to inspire the design of next-generation ferroelectrics capable of overcoming critical challenges encountered in practical ferroelectric memory devices.