Ambipolar Two-Dimensional Materials-Based Reconfigurable Devices
The scaling of complementary metal-oxide-semiconductor (CMOS) technology nodes using conventional semiconductors is decelerating due to short-channel effects and tunneling limitations. Reconfigurable devices based on ambipolar two-dimensional (2D) materials offer a pathway to extend functionality without physical scaling. This review examines the fundamental properties, preparation methods, and recent applications of ambipolar 2D materials in reconfigurable field-effect diodes, logic circuits, and neuromorphic devices. Key experimental demonstrations include reconfigurable photo-induced doping in van der Waals semiconductors (Nat Electron, 2020), anti-ambipolar transport in GeAs/SnS2 heterojunctions (Appl Phys Lett, 2024), and non-volatile neuromorphic photovoltaics (Nat Nanotechnol, 2023). Multi-valued logic transistors utilizing negative differential resistance (Adv Mater, 2022) and ZnO composite nanolayers with mobility edge quantization (Nat Commun, 2019) achieve multi-state operation. Large-scale integration remains challenged by material uniformity and device-to-device variability. The review analyzes these bottlenecks and provides prospects for future development, emphasizing the need for stable doping, scalable synthesis, and circuit-level design co-optimization to realize high-density, multifunctional computing architectures.