Ferroelectric two-dimensional In-Se materials: a review on the structure, property and application
Two-dimensional (2D) ferroelectric materials have emerged as promising candidates for next-generation non-volatile memory and neuromorphic computing, yet their integration into commercial devices faces substantial hurdles. This review critically examines the structure, properties, and applications of ferroelectric 2D In-Se materials, with a focus on their potential to overcome the scaling and retention limitations of conventional ferroelectrics such as Hf0.5Zr0.5O2 (HZO). The manuscript synthesizes recent advances in In-Se ferroelectricity, including the mechanisms of polarization switching, modulation strategies, and device demonstrations. Key experimental benchmarks from the literature are analyzed, such as the high data retention and read endurance of 5-nm HZO ferroelectric FETs (IEEE Electron Device Lett, 2019, 40(3): 399-402) and the giant barrier height modulation in ferroelectric van der Waals heterojunctions (Nat Electron, 2020, 3: 466-472). The review also highlights the performance of sliding ferroelectric memories based on rhombohedral-stacked bilayer MoS2, which achieved non-volatile storage with low power consumption (Nat Commun, 2024, 15: 10796). Despite these advances, critical challenges remain: the scalability of In-Se synthesis, the control of domain dynamics at the nanoscale, and the cost parity with silicon-based technologies. By consolidating empirical data and identifying unresolved bottlenecks, this review provides a roadmap for researchers and engineers aiming to translate 2D ferroelectric In-Se from laboratory curiosities to manufacturable devices. The analysis underscores the need for standardized metrology and accelerated lifetime testing to validate industrial viability.