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Prof. Wenhao Ran

State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences

Research Publications & English Decoded Briefs

Showing 2 publications
SCIENCE CHINA Materials2026DOI: 10.1007/s40843-025-3997-9

An Event-Driven Sensor Based on Colloidal Quantum Dots for Contactless Human-Machine Interaction

Contactless human-machine interaction (HMI) is rapidly evolving, yet it remains constrained by the latency, redundancy, and power consumption inherent in conventional frame-based vision sensors. While bio-inspired event-driven sensors offer a low-power alternative, existing architectures are often complex or fail to accurately encode the magnitude of light intensity changes. Herein, we report a solution-processed, two-terminal event-driven sensory device based on CuIn(Se,S)2 colloidal quantum dots (QDs) integrated with an Sb-doped TiO2 layer. Unlike traditional dynamic vision sensors (DVS), this device exhibits a transient photoresponse that encodes both the polarity and the magnitude of light intensity variations into the output current amplitude. This preservation of magnitude information significantly enhances the feature extraction capability, leading to faster convergence and superior clustering performance in gesture recognition. Based on these unique optoelectronic properties, we constructed a hierarchical HMI system that synergizes the strengths of event-based and frame-based sensing. The system utilizes the event-driven sensor for low-latency gesture control of an unmanned aerial vehicle (UAV) and a frame-based sensor for high-precision gaze control of an unmanned ground vehicle (UGV). The proposed system achieves a gesture recognition accuracy of more than 92.5% while substantially reducing data redundancy, offering a promising strategy for efficient, robust, and low-cost intelligent interaction systems.

SCIENCE CHINA Materials2025DOI: 10.1007/s40843-025-3304-7

Robust coating of indium selenide monolayer inks for wafer-scale, CMOS-compatible, high mobility thin film transistors

The relentless scaling of silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs) has encountered fundamental limits, manifesting as severe short channel effects (SCEs) and degraded carrier transport due to quantum confinement and charge scattering. Two-dimensional (2D) semiconductors offer a promising alternative, but their integration into complementary metal-oxide-semiconductor (CMOS) fabrication lines is impeded by high-temperature chemical vapor deposition (CVD) growth and complex transfer processes. Here, we report a solution-based approach for fabricating wafer-scale indium selenide (InSe) semiconductor thin films using high-purity 2D monolayer inks. Electrochemical molecular intercalation of organic cations in an air-free environment yields pristine InSe monolayers, which are subsequently deposited via robust spin coating onto 4-inch wafers. The film thickness is precisely modulated by ink concentration, spin coating parameters, and cycle number. Thermal annealing converts the THAB/InSe superlattice to pure InSe, producing compact, void-free films with clean van der Waals contacts between monolayers. The resulting thin-film transistors exhibit average electron mobility of 90–120 cm² V⁻¹ s⁻¹, on/off ratios up to 10⁷, and minimal current hysteresis, matching state-of-the-art CVD-grown MoS₂ films. The films demonstrate excellent air stability and CMOS process compatibility, addressing the critical need for reliable solution-based methods for high-quality 2D semiconductor integration.