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Prof. Liu Xiaoyan

Institute for Advanced Interdisciplinary Research, University of Jinan

Research Publications & English Decoded Briefs

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SCIENCE CHINA Materials2026DOI: 10.1007/s40843-025-3617-x

Magnetoelectric-bioactive dual functions of MXene regulate macrophage M1-M2 sequential polarization to promote healing of infected wound

Macrophages are pivotal in infection resolution and tissue repair via dynamic M1-to-M2 phenotypic polarization. Although various nano-biomaterials can modulate macrophage polarization, achieving sequential M1-to-M2 transition using a single nanoformulation remains challenging. Here, we propose a strategy employing transition metal carbide/nitride (MXene) nanosheets, internalized by macrophages, as the sole regulator to induce sequential polarization. Under a rotating magnetic field, the high electrical conductivity and magnetoelectric activity of endocytosed MXene generate electrical signals and reactive oxygen species (ROS), driving M1 polarization. Upon magnetic field removal, the inherent bioactivity of MXene facilitates repolarization to the M2 phenotype. Mechanistically, this transition involves inhibition of the NF-κB signaling pathway and activation of the JAK-STAT signaling pathway. In vivo, MXene nanosheets under on-off rotating magnetic field stimulation enabled sequential M1-to-M2 polarization, promoting bacterial clearance and tissue regeneration in infected wounds. This two-step sequential strategy targeting macrophages offers a promising therapeutic approach for infected wound healing.

SCIENCE CHINA Materials2026DOI: 10.1007/s40843-025-3858-8

Lattice-Engineered High-Quality β-Ga2O3 Membranes for Memristive Applications Towards Image Encryption, Decryption, and Edge Detection

High-quality β-Ga2O3 membranes are pivotal for fabricating high-performance memristive devices. Here, vertical Ag/β-Ga2O3/Pt memristors built on high-crystalline-quality β-Ga2O3 membranes via lattice epitaxy engineering and a sacrificial-layer-assisted exfoliation strategy are reported. The resulting β-Ga2O3-based device demonstrates a high ON/OFF ratio exceeding 10^8, low SET/RESET voltages of 0.13 V/−0.11 V, low programming current of 10^-10 A, stable data retention beyond 4 × 10^4 s, and excellent subthreshold characteristics of ~0.47 mV/dec. Adjustable compliance current enables the coexistence of volatile and non-volatile switching modes. Additionally, the resistive switching versatility is predominantly governed by the migration of Ag ions, as supported by electrical characterizations and first-principles calculations. Furthermore, a β-Ga2O3 memristor-based circuit that functions as a reconfigurable and non-volatile exclusive OR (XOR) logic gate has been designed and simulated, enabling both image encryption/decryption and edge detection. This work not only demonstrates lattice-engineered, high-quality β-Ga2O3 membranes for fabricating advanced memristors but also extends their applicability to digital logic and reconfigurable image processing.

Prof. Liu Xiaoyan | Publications & Academic Profile | SinoGreenTech | SinoGreenTech