• • The Ag/β-Ga2O3/Pt memristor achieves an ON/OFF ratio exceeding 10^8, which is critical for reliable multi-bit storage and logic operations, outperforming conventional oxide memristors that typically exhibit ratios below 10^6.
• • Ultra-low SET/RESET voltages of 0.13 V/−0.11 V and a programming current of 10^-10 A enable energy-efficient operation, reducing power consumption by orders of magnitude compared to traditional flash memory (which requires >10 V and >μA).
• • Data retention exceeds 4 × 10^4 s (over 11 hours) without significant degradation, ensuring non-volatile memory stability for practical applications such as image encryption keys.
• • Subthreshold swing of ~0.47 mV/dec indicates exceptional switching kinetics, enabling fast and precise control of resistive states, which is essential for high-speed neuromorphic computing.