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Prof. HAN Qinglin

School of Electrical Engineering and Automation, Henan Polytechnic University

Research Publications & English Decoded Briefs

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Acta Energiae Solaris Sinica2026DOI: 10.19912/j.0254-0096.tynxb.202608_9707

Research on a High Gain Ratio Dual LLC Resonant Converter

Conventional LLC resonant converters achieve wide voltage gain by substantially widening the switching frequency range, which causes a marked reduction in overall system efficiency. This paper proposes a high gain ratio dual LLC resonant converter (HGRD-LLC) that employs dual resonant tanks and distinct switch drive signal modulations. Through independent or combined operation of half-bridge and full-bridge LLC resonant converters, five operating modes with different gains are obtained. The converter retains the advantages of LLC resonant topologies across all modes while achieving a wide output voltage gain and improving efficiency. Voltage gain is derived using the fundamental harmonic approximation method, and zero-voltage switching (ZVS) constraints are explicitly defined. A 960 W experimental prototype with an output voltage range of 60–480 V was constructed to verify the feasibility of the proposed topology. Experimental results demonstrate that the converter achieves a wide gain range within a switching frequency range of 90–190 kHz, with gain ratios of 1:2:4:6:8 at the resonant frequency. The peak efficiency reaches 97.2%, and the maximum gain is 8.0, outperforming conventional solutions in terms of gain and efficiency. The proposed topology shows strong engineering application value for wide voltage gain requirements in renewable energy storage charging systems.

SCIENCE CHINA Materials2025DOI: 10.1007/s40843-025-3435-3

Optoelectronic interconnection applications from growth-based monolithic in-plane integration of CsPbBr3 nanowire arrays with CdSSe nanoribbon trunks

Semiconductor nanowires (NWs) have been extensively applied in light sources, waveguides, and photodetectors (PDs), providing abundant components for optoelectronic interconnection applications. However, the efficient in-plane integration of various devices remains challenging, which is a prerequisite for the practical application of NWs. Here, the growth-based integration of CsPbBr3 NW arrays with CdSSe ribbons transferred onto mica is achieved via a vapor deposition route. The transferred ribbons not only act as preferential nucleation sites for CsPbBr3, but also break the growth symmetry of CsPbBr3 NWs on mica, allowing wires with the largest angle to the ribbon edge to grow longer and form arrays. The waveguide studies show that the CsPbBr3 NW arrays can confine and guide the light emission from both themselves and the CdSSe ribbon well. Importantly, the optoelectronic interconnection was successfully demonstrated based on the achieved heterostructures, where the CsPbBr3 NWs served as the light source and waveguide, and PDs were made from the CdSSe ribbon. When a single CsPbBr3 NW was illuminated by a focused 457 nm laser at a distance of 37.5 μm from the CdSSe ribbon, the on/off ratio of the system reached 8.3×10^3, resulting from the efficient response of the PD to the guided light. Moreover, the system can distinguish the pulsed light excitation well below 2000 Hz, limited by the response speed of the PDs. This work paves the way for the on-chip integration of nanoscale light emitters, waveguides, and detectors, promoting the practical application of semiconductor NWs in photonic circuits.

Prof. HAN Qinglin | Publications & Academic Profile | SinoGreenTech | SinoGreenTech