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Verified CAS / Academic Author2 Decoded Studies

Prof. GUO Yuqi

Tianjin University

Research Publications & English Decoded Briefs

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SCIENCE CHINA Materials2026DOI: 10.1007/s40843-026-4277-1

Anion modulation induced room-temperature ferromagnetism in two-dimensional CuCrSe2

Two-dimensional (2D) magnetic materials hold promise for next-generation spintronics, yet most exhibit Curie temperatures (Tc) far below room temperature, limiting practical applications. Here, we report the realization of room-temperature ferromagnetism in CuCrSe2 nanosheets via controlled anion removal achieved by post-synthetic vacuum annealing. Raw CuCrSe2 shows a low Tc of ~120 K, whereas annealed CuCrSe2 (A-CuCrSe2) nanosheets exhibit robust ferromagnetic ordering above 300 K. Structural and compositional analyses, including transmission electron microscopy, Raman spectroscopy, and X-ray absorption spectroscopy, confirm that A-CuCrSe2 retains the original layered crystal structure with an estimated Se vacancy concentration of approximately 10%. Magnetic measurements reveal room-temperature ferromagnetism in exfoliated nanosheets, corroborated by magnetic imaging and electric transport measurements. Anomalous Hall effect (AHE) measurements uncover the coexistence of two ferromagnetic phases within the same sample: one with low Tc (~120 K) and another with high Tc (>300 K), indicating spatially heterogeneous magnetic ordering driven by anion removal distribution. Density functional theory (DFT) calculations elucidate the microscopic mechanism, suggesting that Se vacancies modulate the magnetic exchange interactions, enhancing Tc. This work demonstrates that anion modulation is an effective intrinsic strategy to achieve room-temperature ferromagnetism in 2D materials, potentially advancing spintronic applications.

SCIENCE CHINA Materials2025DOI: 10.1007/s40843-025-3448-1

High work function silver nanowire electrodes via ligand exchange reaction for stretchable organic thin-film transistors

Silver nanowires (AgNWs) are established as promising conductors for stretchable electronics, yet their application in p-type organic thin-film transistors (OTFTs) is constrained by a substantial work function mismatch with the highest occupied molecular orbital (HOMO) of organic semiconductors, resulting in severe charge injection barriers and degraded device performance. This study addresses the bottleneck through a ligand exchange reaction on the AgNW surface using fluorinated molecules, combined with a post-treatment-free fabrication process. The ligand-exchanged AgNW electrodes exhibit a work function exceeding 5 eV, closely aligning with the HOMO level of the p-type polymer semiconductor poly(indacenodithiophene-co-benzothiadiazole) (IDT-BT). Consequently, IDT-BT-based OTFTs incorporating these electrodes demonstrate a reduced threshold voltage and enhanced carrier transport, achieving a hole mobility of 0.4 cm2 V−1 s−1. Critically, the ligand exchange does not compromise mechanical deformability; the devices retain their original mobility after being subjected to 30% strain. These results validate the ligand-exchange strategy as an effective route for work function tuning of AgNW electrodes, enabling high-performance stretchable organic electronics without sacrificing mechanical resilience.