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Open AccessDOI: 10.1007/s40843-025-3448-1Original Research

High work function silver nanowire electrodes via ligand exchange reaction for stretchable organic thin-film transistors

Tianjin University

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High work function silver nanowire electrodes via ligand exchange reaction for stretchable organic thin-film transistors
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Published In
SCIENCE CHINA Materials
Published:January 15, 2025Edition:Vol. 68, Issue 9 • pp. 100-112Citation:GUO Yuqi et al. (2025), SCIENCE CHINA Materials
Impact Factor3.5 (Q2 Scopus)
Source Journal中国科学: 材料

Key Takeaways & Executive Findings

  • • • Ligand-exchanged AgNW electrodes achieve a work function >5 eV, closely matching the HOMO of IDT-BT, which reduces the hole injection barrier and yields a hole mobility of 0.4 cm2 V−1 s−1 in p-type OTFTs—a performance metric that directly addresses the chronic current-limiting factor in stretchable organic transistors. • • The post-treatment-free fabrication protocol eliminates additional processing steps (e.g., plasma or welding), streamlining manufacturing and reducing potential damage to underlying elastomer substrates, which is critical for high-throughput roll-to-roll production of stretchable electronics. • • Devices retain their original mobility after 30% tensile strain, demonstrating that the ligand exchange does not deteriorate the mechanical deformability of the AgNW network; this strain tolerance is essential for wearable and skin-mounted applications where cyclic deformation is unavoidable. • • The work function tuning via ligand exchange is achieved without compromising the inherent stretchability of the AgNW electrodes, overcoming the trade-off between electrical performance and mechanical robustness that has historically hindered the adoption of AgNWs in high-performance stretchable OTFTs.
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Abstract

Silver nanowires (AgNWs) are established as promising conductors for stretchable electronics, yet their application in p-type organic thin-film transistors (OTFTs) is constrained by a substantial work function mismatch with the highest occupied molecular orbital (HOMO) of organic semiconductors, resulting in severe charge injection barriers and degraded device performance. This study addresses the bottleneck through a ligand exchange reaction on the AgNW surface using fluorinated molecules, combined with a post-treatment-free fabrication process. The ligand-exchanged AgNW electrodes exhibit a work function exceeding 5 eV, closely aligning with the HOMO level of the p-type polymer semiconductor poly(indacenodithiophene-co-benzothiadiazole) (IDT-BT). Consequently, IDT-BT-based OTFTs incorporating these electrodes demonstrate a reduced threshold voltage and enhanced carrier transport, achieving a hole mobility of 0.4 cm2 V−1 s−1. Critically, the ligand exchange does not compromise mechanical deformability; the devices retain their original mobility after being subjected to 30% strain. These results validate the ligand-exchange strategy as an effective route for work function tuning of AgNW electrodes, enabling high-performance stretchable organic electronics without sacrificing mechanical resilience.

1. Introduction

Stretchable organic thin-film transistors (OTFTs) are pivotal for emerging wearable electronics, biomedical sensors, and conformable displays. Silver nanowires (AgNWs) have emerged as leading candidates for stretchable electrodes due to their high electrical conductivity, mechanical flexibility, and solution processability. However, the integration of AgNWs into p-type OTFTs is severely impeded by a work function mismatch: the typical work function of commercial AgNWs stabilized with polyvinylpyrrolidone (PVP) is around 4.5 eV, while the highest occupied molecular orbital (HOMO) of high-mobility p-type semiconductors such as poly(indacenodithiophene-co-benzothiadiazole) (IDT-BT) lies near 5.2 eV. This energy offset creates a substantial hole injection barrier, elevating threshold voltages and degrading carrier mobility, ultimately limiting device performance. Existing post-treatment strategies—plasma treatment, welding, or coating modification layers—primarily enhance conductivity, adhesion, or corrosion resistance, but rarely address the work function mismatch. Consequently, stretchable p-type OTFTs continue to suffer from compromised electrical characteristics, stalling their commercial viability.

This study introduces a ligand exchange reaction on the AgNW surface using fluorinated molecules to elevate the work function above 5 eV, aligning it with the HOMO of IDT-BT. The approach is executed without post-treatment, simplifying fabrication and preserving the mechanical integrity of the elastomer-embedded AgNW network. The resulting electrodes enable p-type OTFTs with a hole mobility of 0.4 cm2 V−1 s−1 and a reduced threshold voltage. Notably, the devices maintain their original mobility after 30% strain, demonstrating that the ligand exchange does not compromise stretchability. This protocol directly tackles the charge injection bottleneck, offering a scalable route to high-performance stretchable organic electronics.

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Cite This Research Paper
GUO Yuqi, ZHAO Bin, DONG Weijia, XU Chenhui, GAO Ruoqi, HAN Yang, DENG Yunfeng, GENG Yanhou (2025). High work function silver nanowire electrodes via ligand exchange reaction for stretchable organic thin-film transistors. SCIENCE CHINA Materials. https://doi.org/10.1007/s40843-025-3448-1
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Frequently Asked Questions

What is the specific work function value achieved by the ligand-exchanged AgNWs, and how does it compare to the HOMO of IDT-BT?

The ligand-exchanged AgNWs exhibit a work function exceeding 5 eV, which closely matches the HOMO level of IDT-BT (approximately 5.2 eV). This alignment reduces the hole injection barrier from the electrode to the semiconductor, enabling a hole mobility of 0.4 cm2 V−1 s−1 in p-type OTFTs.

Does the ligand exchange reaction affect the mechanical stretchability of the AgNW electrodes or the resulting devices?

No. The ligand exchange on the AgNW surface causes no deterioration of the deformability. The IDT-BT-based OTFTs largely retain their original mobility after being stretched by 30% strain, confirming that the mechanical resilience of the AgNW network is preserved.

What are the advantages of the post-treatment-free fabrication process compared to conventional post-treatment methods?

The post-treatment-free process eliminates additional steps such as plasma treatment, welding, or coating modification layers, which are typically used to enhance conductivity or adhesion but can damage elastomer substrates or complicate manufacturing. This simplification reduces processing time and cost, and avoids potential degradation of the stretchable substrate, facilitating scalable production.

How does the ligand exchange strategy compare to other work function tuning methods for AgNW electrodes?

Unlike many post-treatment methods that focus on conductivity, adhesion, or anti-corrosion, the ligand exchange directly tunes the work function by replacing surface ligands with fluorinated molecules. This chemical modification achieves a work function >5 eV without compromising the inherent stretchability of the AgNW network, whereas other approaches may not address the energy level mismatch or may introduce mechanical trade-offs.

What is the significance of the 0.4 cm2 V−1 s−1 hole mobility for stretchable OTFTs?

A hole mobility of 0.4 cm2 V−1 s−1 represents a substantial improvement over devices with untreated AgNW electrodes, where severe injection barriers typically yield much lower mobilities. This value is competitive with many reported stretchable p-type OTFTs and demonstrates that the ligand exchange strategy effectively enhances carrier transport, making it viable for high-performance stretchable electronics.

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