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Anion modulation induced room-temperature ferromagnetism in two-dimensional CuCrSe2

Authors: Minghao Wang; Xiaolin Tai; Wenjie Wang; Yueqi Su; Huan Shen; Haofeng Sun; Yang Liu; Xuguang Liu; Jiyin Zhao; Yue Lin; Wangsheng Chu; Yuqiao Guo; Yongchun Zhu; Jing Peng; Changzheng Wu; Yi Xie

DOI: 10.1007/s40843-026-4277-1Status: Verified Translated Edition
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Key Findings in This Report

• • Annealed CuCrSe2 (A-CuCrSe2) nanosheets exhibit robust ferromagnetic ordering above 300 K, a significant increase from the pristine Tc of ~120 K, enabling room-temperature spintronic operation. • • The Se vacancy concentration is approximately 10%, as confirmed by structural and compositional analyses, which is critical for tuning magnetic properties without altering the layered crystal structure. • • Anomalous Hall effect (AHE) measurements reveal the coexistence of two ferromagnetic phases within the same sample, with Tc values of ~120 K and >300 K, indicating spatially heterogeneous magnetic ordering that could be exploited for multi-state memory devices. • • Density functional theory (DFT) calculations provide mechanistic insight, showing that Se vacancies modulate magnetic exchange interactions, offering a design principle for achieving high-Tc 2D magnets through anion engineering.