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DZ
Verified CAS / Academic Author5 Decoded Studies

Prof. Di ZHANG

Anhui University of Technology, Ma'anshan, Anhui 243002, China

Research Publications & English Decoded Briefs

Showing 5 publications
SCIENCE CHINA Materials2026DOI: 10.1007/s40843-026-4391-5

Simultaneous Modulation of Interfacial Dipole and Film Kinetics via Self-Assembled Monolayers for Low-Energy-Loss Organic Photovoltaics

Self-assembled monolayers (SAMs) enable precise tuning of the ITO/active layer interfacial dipole, yet their impact on the crystallization kinetics of the overlying active layer remains poorly understood, limiting their potential in high-efficiency organic solar cells. This study introduces THPC, a self-assembling material with an extended carbazole core and heteroatom substitution, as a hole transport layer (HTL). Unlike the hydrophilic PEDOT:PSS, THPC exhibits low surface energy, providing a favorable template that extends the film formation kinetics of the PM6:L8-BO-X blend by nearly 1.4 times, mitigating the explosive nucleation prevalent in PM6-based active layers. This promotes a highly ordered fibrous morphology and enhances vertical phase separation. The deep work function of THPC (5.32 eV) increases the built-in potential, reduces interfacial trap density, and facilitates charge extraction. Consequently, non-radiative recombination loss decreases from 0.243 eV to 0.227 eV, and the open-circuit voltage rises from 0.866 V to 0.883 V, yielding a power conversion efficiency (PCE) of 20.19%, outperforming the PEDOT:PSS control (18.67%). This finding is confirmed across multiple Y-series acceptors, all approaching 20% PCE. Notably, the D18:L8-BO system achieves a PCE of 20.55%, demonstrating broad applicability.

The Chinese Journal of Process Engineering2026DOI: 10.12034/j.issn.1009-606X.225191

Optimization Strategies for Thermal Transport Properties in p-Type Mg3Sb2-Based Thermoelectric Materials: A Review

Mg3Sb2-based materials, featuring a unique layered crystal structure, exhibit a favorable combination of low thermal conductivity, high Seebeck coefficient, and decent carrier mobility, establishing them among the most promising mid-temperature thermoelectric systems under active investigation. However, p-type Mg3Sb2 derivatives demonstrate a comparatively lower thermoelectric figure of merit (zT) compared to their n-type counterparts. Enhancing the zT performance of p-type Mg3Sb2 is therefore essential for the development of high-efficiency thermoelectric devices based on this material system. This review systematically summarizes the critical factors governing the thermal transport properties of p-type Mg3Sb2, including intrinsic characteristics such as chemical bonding and crystal structure, as well as extrinsic parameters such as carrier concentration, mobility, point defects, microstructure, and temperature dependence effects. Furthermore, it highlights recent advances in strategies designed to optimize thermal conductivity (κ) and improve zT, mainly including point defect engineering (such as Mg-site doping, Sb-site doping, dual-site co-doping, as well as doping-assisted composite modification), low-dimensional and nanostructural design, and advanced preparation technologies. Experimental studies demonstrate that these targeted strategies, particularly the synergistic introduction of multi-scale defects, can effectively suppress phonon propagation and significantly reduce lattice thermal conductivity (κL). Consequently, substantial improvements in the overall zT of p-type Mg3Sb2-based materials have been realized, providing a robust scientific and technical foundation for accelerating the practical application of Mg3Sb2-based thermoelectric devices.

SCIENCE CHINA Materials2026DOI: 10.1007/s40843-025-3874-1

Thriving In-Memory Computing and Neuromorphic Applications of Ferroelectric-Based Devices

The rapid expansion of artificial intelligence (AI) model sizes to trillions of parameters has intensified the demand for computational paradigms that overcome the von Neumann bottleneck. Emerging memory technologies, while advancing, fall short of meeting the massive requirements of large-scale models. Ferroelectric materials, with their continuous tunability of domain patterns, offer a promising route to emulate synaptic weights in biological learning. This review systematically examines four fundamental ferroelectric-based device architectures: ferroelectric capacitors, ferroelectric field-effect transistors (FeFETs), ferroelectric tunnel junctions (FTJs), and ferroelectric domain wall memories. We analyze their latest progress, application domains, and inherent advantages, while critically assessing the challenges impeding their commercialization. Key issues include scalability, endurance, retention, and integration with CMOS technology. We also highlight optimization strategies for material and device performance, array-level design, and neuromorphic computing architectures. Future research directions are proposed, emphasizing the expansion of novel applications and the realization of energy-efficient, high-density in-memory computing systems. This review provides a comprehensive framework for researchers and engineers aiming to harness ferroelectric devices for next-generation computing.

SCIENCE CHINA Materials2026DOI: 10.1007/s40843-025-4032-x

Achieving 19.41% Efficiency in Thickness-Insensitive All-Polymer Solar Cells via Interface Modifier-Mediated Morphological Modulation

This study introduces a dual-compatibility third component as an interfacial modifier to precisely regulate the active layer morphology of bulk heterojunction organic solar cells (BHJ-OSCs). This approach successfully suppresses excessive phase separation, significantly enhancing the performance of thick-film devices. The interface-styling strategy enhances donor–acceptor interactions, optimizes vertical phase separation morphology, extends exciton diffusion length, improves exciton dissociation efficiency, facilitates efficient charge transport, and effectively suppresses trap-assisted recombination. The ternary device based on PM6:PCN3:PY-IT achieved a power conversion efficiency (PCE) of 19.41%, which was much higher than that of the PM6:PY-IT binary system (18.67%). The device maintains excellent performance at an active layer thickness of 200 nm, achieving a high PCE of 18.25%. This study demonstrates the significance of using dually compatible molecules for interface modification in all-polymer solar cells (all-PSCs), providing theoretical guidance for the fabrication of high-performance thick-film devices.

SCIENCE CHINA Materials2026DOI: 10.1007/s40843-025-3998-8

Influence of Structural Isomerism in Multicomponent Covalent Organic Frameworks on Their Photocatalytic H2O2 Production

Constitutional isomerism in covalent organic frameworks (COFs) has emerged as a powerful strategy to tailor material properties for photocatalytic applications. Here, we report the design and synthesis of two isomeric multicomponent COFs (MC-COFs) via Schiff-base condensation followed by Povarov reaction, converting imine linkages into quinoline structures. These isomeric MC-COFs exhibit opposing C=N bond orientations and distinct phenyl group alignments within the COF pores, leading to different torsion angles in the COF layers. Structural analyses reveal that enhanced planarity promotes π-π stacking and electron delocalization, resulting in favorable band structures and reduced exciton binding energies. Consequently, the optimized COF achieves a superior hydrogen peroxide (H2O2) production rate of 3128 μmol g−1 h−1 under visible light irradiation. This work underscores the critical influence of structural isomerism on the photocatalytic efficiency of MC-COFs and provides insights for rational design of high-performance COF-based photocatalysts.