All-solution-processed organic field-effect transistors with low contact resistance via interface engineering for high-performance flexible circuits
Solution-processed organic field-effect transistors (OFETs) offer a low-cost route to flexible electronics, but their performance is often limited by high contact resistance arising from interfacial incompatibility between solution-deposited electrodes and organic semiconductors. This study addresses that bottleneck by inserting a multifunctional poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) buffer layer at the Ag/semiconductor interface in all-solution-processed OFETs. The buffer layer reduces the Schottky barrier and provides favorable affinity with Ag, enabling hybrid PEDOT:PSS/Ag electrode patterns. Using the p-type semiconductor PDVT-10, the optimized devices achieve a low contact resistance of 789 Ω cm, an average mobility of 10.5 cm2 V−1 s−1, and exceptional operational and bending stability. A pseudo-complementary inverter built entirely from solution-processed components exhibits a voltage gain exceeding 260. These results demonstrate that interface engineering with PEDOT:PSS can overcome the contact-resistance limitation of all-solution-processed OFETs, enabling high-performance flexible circuits at reduced cost.