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Prof. Chao Zhou

Nanjing University

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Showing 2 publications
Chinese Journal of Environmental Engineering2026DOI: 10.12030/j.cjee.202509053

Comparative Carbon Emission Assessment of Waste Plastic Valorization Pathways

The escalating global generation of waste plastics necessitates robust recycling strategies to mitigate environmental impact and advance low-carbon development. This study employs life cycle assessment (LCA) and emission factor methodologies to quantify the carbon footprints of six distinct waste plastic valorization pathways: mechanical recycling, pyrolysis, alcoholysis, co-coking, solid fuel production, and direct incineration. The functional unit is one tonne of waste plastic, with system boundaries encompassing transportation, pretreatment, and resource utilization. The model accounts for indirect emissions from energy consumption, direct emissions from plastic decomposition, and carbon offsets from material or energy recovery. Results indicate that pyrolysis yields the highest carbon offset of approximately -3,024 kgCO2e per tonne, while mechanical recycling achieves an 88% material recovery rate and a net carbon offset of -991.4 kgCO2e. Net carbon emissions per tonne of waste plastic rank as follows: direct incineration (1,104 kgCO2e) > co-coking (185.8 kgCO2e) > solid fuel (115.4 kgCO2e) > alcoholysis (-259.5 kgCO2e) > mechanical recycling (-991.4 kgCO2e) > pyrolysis (-2,592 kgCO2e). These findings demonstrate that pyrolysis offers superior carbon reduction benefits compared to incineration, exhibiting a net-negative carbon footprint across its life cycle. The study provides a scientific basis for selecting low-carbon waste plastic valorization routes and informs carbon trading and emission reduction strategies in the solid waste sector.

SCIENCE CHINA Materials2026DOI: 10.1007/s40843-026-4215-3

An In-Situ Oxidation Routine for Reliable Low-Voltage 2D FeFETs

The escalating demand for energy-efficient edge inference in artificial intelligence has intensified the search for hardware that transcends the von Neumann bottleneck. Ferroelectric field-effect transistors (FeFETs) are promising due to their non-destructive readout, low programming energy, and multilevel operation. However, integrating ultrathin ferroelectrics with two-dimensional (2D) channels remains challenging due to the inert surfaces of 2D materials, which impede uniform film growth. Moreover, conventional ferroelectrics like doped hafnia and AlScN suffer performance degradation at thicknesses required for sub-1V operation. The interface between ferroelectric and 2D semiconductor is often plagued by traps and parasitic layers, causing threshold drift and fatigue. In a recent Science report, Hailin Peng and colleagues present an innovative solution: a native ferroelectric buffer derived from the semiconductor itself. By oxidizing layered Bi2O2Se below 400°C, they produce wafer-scale α-Bi2SeO5, a van der Waals ferroelectric oxide. This material retains robust ferroelectricity down to the monolayer limit, supporting both out-of-plane and in-plane polarization switching. It exhibits a high relative dielectric constant (~24) and a Curie temperature near 880 K. The in-situ oxidation approach enables precise thickness control, yielding a uniform, switchable, and robust gate stack for 2D FeFETs, addressing the critical challenges of voltage scaling and interface quality.