• • Hf0.85Ce0.15O2−δ films on (011)-oriented STO achieve 2Pr = 102.1 μC/cm2, the highest reported for HfO2-based ferroelectrics, enabling reduced capacitor cell area and stronger ferroelectric field modulation for high-density non-volatile memory.
• • Fatigue resistance remains <10% degradation after 107 switching cycles, satisfying industrial endurance requirements for embedded memory and in-memory computing arrays.
• • The (011) substrate orientation maximizes Ce3+ content and unit cell volume, inducing chemical negative strain that stabilizes the ferroelectric orthorhombic phase; this orientation-dependent control is critical for reproducible device performance.
• • Piezoresponse force microscopy confirms robust polarization switching with ~180° phase reversal under ±10 V bipolar cycling, validating reliable ferroelectric switching at the local scale for capacitor and transistor integration.