Ultra-robust Y-doped hafnium oxide ferroelectric memristors for intelligent edge computing

• • YHO memristors exhibit a remanent polarization of ~30 μC/cm2, enabling stable multi-level states for analog synaptic weight storage in neuromorphic circuits. • • Multi-level resistive state retention time of ~10^5 s ensures long-term data persistence, critical for non-volatile in-memory computing in edge devices. • • Endurance of up to 10^9 cycles demonstrates exceptional robustness, surpassing typical oxide-based memristors and meeting industrial reliability standards for repeated write/read operations. • • The fabricated device achieved 100% path recognition accuracy in a real-time vehicle tracking system and delivered denoised images with PSNR of 27.04 and SSIM of 0.80, validating its utility in edge AI applications.