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Open AccessDOI: 10.1007/s40843-025-3817-3Original Research

Ultra-robust Y-doped hafnium oxide ferroelectric memristors for intelligent edge computing

Hebei University

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Ultra-robust Y-doped hafnium oxide ferroelectric memristors for intelligent edge computing
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Published In
SCIENCE CHINA Materials
Published:January 15, 2026Edition:Vol. 69, Issue 5 • pp. 100-112Citation:Biao Yang et al. (2026), SCIENCE CHINA Materials
Impact Factor3.5 (Q2 Scopus)
Source Journal中国科学: 材料

Key Takeaways & Executive Findings

  • • • YHO memristors exhibit a remanent polarization of ~30 μC/cm2, enabling stable multi-level states for analog synaptic weight storage in neuromorphic circuits. • • Multi-level resistive state retention time of ~10^5 s ensures long-term data persistence, critical for non-volatile in-memory computing in edge devices. • • Endurance of up to 10^9 cycles demonstrates exceptional robustness, surpassing typical oxide-based memristors and meeting industrial reliability standards for repeated write/read operations. • • The fabricated device achieved 100% path recognition accuracy in a real-time vehicle tracking system and delivered denoised images with PSNR of 27.04 and SSIM of 0.80, validating its utility in edge AI applications.

Abstract

The rapid development of artificial intelligence (AI) and big data-driven edge intelligence applications has created an urgent demand for highly efficient computing hardware. Ferroelectric memristors have emerged as promising candidates for edge hardware due to their multi-level conductance tunability and high integration potential. In this work, we fabricated yttrium-doped hafnium oxide (YHO) memristors with a remanent polarization of ~30 μC/cm2, a multi-level resistive state retention time of approximately 10^5 s, and an endurance of up to 10^9 cycles. Based on this device, we constructed a real-time path-tracking system for intelligent vehicles—which achieves 100% path recognition accuracy—and a traffic sign denoising network optimized for hardware mapping via a hierarchical mixed-precision quantization strategy; this network yields denoised images with a peak signal-to-noise ratio (PSNR) of 27.04 and a structural similarity index measure (SSIM) of 0.80. This work paves an innovative pathway for the practical application of hafnium-based ferroelectric memristors, accelerating the development of highly efficient hardware for edge intelligence.

1. Introduction

Conventional von Neumann architectures suffer from the intrinsic bottleneck of storage-computing separation, leading to low energy efficiency and high latency in edge computing scenarios. Oxygen-vacancy-based memristors, while offering non-volatile resistive switching, rely on stochastic filament formation, resulting in poor device uniformity and limited precision, which hinders their use in complex neural networks requiring stable synaptic weights.

Ferroelectric memristors provide a deterministic switching mechanism via polarization reversal, offering exceptional retention and linear multilevel conductance. Hafnium-based oxides are particularly attractive due to CMOS compatibility and scalability, but pure HfO2 lacks ferroelectric phase stability. This work addresses that by yttrium doping, stabilizing the ferroelectric phase and achieving robust performance metrics, thereby enabling practical edge AI hardware.

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Cite This Research Paper
Biao Yang, Weifeng Zhang, Pengfei Li, Yongqing Jia, Xiaobing Yan (2026). Ultra-robust Y-doped hafnium oxide ferroelectric memristors for intelligent edge computing. SCIENCE CHINA Materials. https://doi.org/10.1007/s40843-025-3817-3
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Frequently Asked Questions

What is the failure mechanism under repeated polarization switching, and how does yttrium doping mitigate fatigue?

The device endurance reaches 10^9 cycles, indicating robust resistance to polarization fatigue. Yttrium doping stabilizes the ferroelectric orthorhombic phase, reducing oxygen vacancy migration and domain pinning, which are common causes of fatigue in HfO2-based devices.

How does the retention time of 10^5 s compare to commercial non-volatile memories, and what are the implications for data storage in edge devices?

A retention time of 10^5 s (approximately 28 hours) is sufficient for temporary storage in edge inference tasks, but may not meet long-term archival requirements. However, for synaptic weights in neural networks that are periodically updated, this retention is adequate, and the device's high endurance compensates for frequent reprogramming.

What is the energy consumption per switching event, and how does it compare to conventional CMOS logic?

The paper does not explicitly report energy per switching event, but ferroelectric memristors typically operate at low voltages (<5 V) and exhibit fast switching, leading to energy consumption in the picojoule range, which is orders of magnitude lower than CMOS-based analog computing.

What are the scalability challenges for integrating YHO memristors into crossbar arrays for high-density edge AI accelerators?

Scalability is promising due to CMOS compatibility of HfO2. However, challenges include maintaining uniformity in large arrays, minimizing leakage currents, and ensuring precise control of doping concentration. The demonstrated high endurance and retention suggest potential for reliable operation, but further work is needed on array-level integration.

How does the hierarchical mixed-precision quantization strategy improve hardware efficiency without sacrificing accuracy?

The strategy assigns different bit precisions to different layers of the neural network, reducing computational and memory requirements while maintaining high accuracy. In the traffic sign denoising task, the network achieved PSNR of 27.04 and SSIM of 0.80, indicating effective denoising with optimized hardware mapping.

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