• • Uniaxial strain up to 3% in single-layer MoSe2 enables precise and reversible bandgap tuning, with a direct-to-indirect transition observed at ~2% strain, critical for optoelectronic device engineering but requiring substrate clamping to prevent relaxation.
• • Biaxial strain of 1-2% in monolayer MoS2 via thermal expansion mismatch yields mobility enhancement of up to 200% compared to unstrained devices, yet strain non-uniformity across wafer-scale films remains below 85% uniformity, limiting industrial reproducibility.
• • Compressive strain in few-layered SnSe2 films grown on SrTiO3 induces charge ordering and enhanced interfacial superconductivity, with a superconducting transition temperature (Tc) of ~3.2 K, demonstrating strain's role in emergent quantum phenomena but requiring lattice-matched substrates that are not CMOS-compatible.
• • Process-induced stress from encapsulation layers can generate up to 1.5% tensile strain in MoS2 transistors, improving on-current by 50% but accelerating degradation rates by 0.5% per 1000 hours under bias-temperature stress, posing reliability challenges for 3D integration.