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Self-powered p-GeTe/n-MoS2 heterojunction on flexible substrate for high-performance broadband photodetectors

Authors: ZHANG Bingbing; ZHOU Xin; WEN Zhaoyang; XU Kaibing; WANG Chunrui; WU Jingyuan; WU Liangcai

DOI: 10.1007/s40843-025-3363-2Status: Verified Translated Edition
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Key Findings in This Report

• • At 405 nm, the device achieves a responsivity of 3877 A/W and detectivity of 8.1 × 10^12 Jones, surpassing many reported 2D photodetectors; this high sensitivity enables low-light detection in wearable health monitors and imaging arrays. • • Under 808 nm NIR illumination, responsivity is 1.28 A/W and detectivity 1.2 × 10^9 Jones, demonstrating broadband operation essential for optical communication and night vision. • • Response times of 0.45 s (rise) and 0.28 s (fall) are competitive for self-powered devices, though slower than some commercial photodiodes; this trade-off is acceptable for many wearable applications where low power consumption is critical. • • Flexible devices on polyimide retain stable dark current and photocurrent after 500 bending cycles, proving mechanical durability for wearable sensors that undergo repeated deformation.