• • Wafer-scale CuCrS2 films with thickness controlled from 2 to 10 nm via two-step vapour deposition; enables uniform ferroelectric layers for high-density memory arrays, overcoming previous micron-scale lateral size limits.
• • Ferroelectric hysteresis loops strengthen with temperature, with ionized Cu atoms gaining mobility above 200 K; this threshold defines the operational temperature window for reliable polarization switching in ferro-ionic devices.
• • Vertical memristor devices using 200 nm Au electrodes exhibit LRS-LRS characteristics and reproducible hysteresis across multiple locations; demonstrates device-level robustness for large-area integration.
• • Extension to CuCrSe2 films (7.8 nm) with Raman peaks at ~146 and 220 cm−1 and SHG six-fold symmetry confirms method reproducibility; provides a general route for other 2D ferroelectric films, reducing process development costs.