• • Achieves a giant TMR ratio of 1.1×10^4% (11000%) in a fully electrically controlled MTJ, surpassing the best experimental value (65% in CoFeB/MgO/CoFeB) by over two orders of magnitude, enabling higher read margins and noise immunity in memory arrays.
• • Supports 4 or 10 distinct resistance states via electrical control, compared to only 2 states in conventional magnetically controlled MTJs, directly increasing data storage density per cell without scaling down physical dimensions.
• • Eliminates the need for external magnetic fields, reducing write energy and enabling integration with CMOS logic, as the switching mechanism is purely voltage-driven, a critical advantage for low-power spintronic applications.
• • Theoretical design validated by first-principles calculations, providing a predictive framework for experimental realization; the TMR ratio is 10 times higher than the best theoretical magnetoelectric co-controlled system (CrSb/In2Se3/Fe3GaTe2, TMR 1031%), indicating superior performance potential.