Key Takeaways & Executive Findings
- •• • Achieves a giant TMR ratio of 1.1×10^4% (11000%) in a fully electrically controlled MTJ, surpassing the best experimental value (65% in CoFeB/MgO/CoFeB) by over two orders of magnitude, enabling higher read margins and noise immunity in memory arrays. • • Supports 4 or 10 distinct resistance states via electrical control, compared to only 2 states in conventional magnetically controlled MTJs, directly increasing data storage density per cell without scaling down physical dimensions. • • Eliminates the need for external magnetic fields, reducing write energy and enabling integration with CMOS logic, as the switching mechanism is purely voltage-driven, a critical advantage for low-power spintronic applications. • • Theoretical design validated by first-principles calculations, providing a predictive framework for experimental realization; the TMR ratio is 10 times higher than the best theoretical magnetoelectric co-controlled system (CrSb/In2Se3/Fe3GaTe2, TMR 1031%), indicating superior performance potential.
Abstract
Magnetic tunnel junctions (MTJs) with multiferroic tunneling barriers offer a pathway to fully electrically controlled multi-state memory, addressing the high energy costs and scalability limits of magnetically controlled counterparts. In this work, we propose a theoretical design achieving four or ten distinct resistance states via electrical control, with a giant tunneling magnetoresistance (TMR) ratio of 1.1×10^4% (11000%). This value surpasses all previously reported MTJs, including experimental systems such as CoFeB/MgO/CoFeB (TMR 65%, 4 states) and theoretical systems like Ga2O3/MgO/Ga2O3 (TMR 1120%, 2 states). The multiferroic barrier enables simultaneous control of ferroelectric and magnetic order parameters, allowing reversible switching between multiple resistance levels without external magnetic fields. Our first-principles calculations reveal that the high TMR arises from spin-dependent tunneling through the barrier, modulated by the ferroelectric polarization direction and magnetization configuration. The device operates with low write energy and exhibits non-volatile retention, making it suitable for high-density storage and in-memory computing. This work establishes a new benchmark for electrically controlled MTJs and provides a practical route to overcome the limitations of current spintronic memory technologies.
1. Introduction
Conventional magnetic tunnel junctions (MTJs) rely on external magnetic fields or spin-transfer torque to switch between two resistance states, limiting their scalability and energy efficiency for next-generation memory. While magnetoelectric co-controlled MTJs have demonstrated multi-state operation, they still require magnetic fields, complicating device architecture. Fully electrically controlled MTJs, which use voltage to manipulate both ferroelectric and magnetic orders, promise ultralow power consumption and seamless integration with CMOS technology, yet achieving high tunneling magnetoresistance (TMR) and multiple stable states remains a critical bottleneck.
This work addresses this challenge by employing a multiferroic tunneling barrier that couples ferroelectric and magnetic order parameters. Through first-principles calculations, we demonstrate a device with four or ten distinct resistance states and a TMR ratio of 1.1×10^4%, far exceeding existing experimental and theoretical benchmarks. The design eliminates magnetic fields, reduces write energy, and offers a practical pathway to high-density, non-volatile memory with potential for in-memory computing.
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HU Yixuan, XIE Wenhao, ZHANG Shichen, LIU Fangqi, XIONG Rui, LIU Yong, ZHU Sicong, WANG Ziyu (2026). Electrically Controlled Multi-State Memory Magnetic Tunnel Junctions Based on Multiferroic Tunneling Barriers. SCIENCE CHINA Materials. https://doi.org/10.1007/s40843-026-4491-3
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Frequently Asked Questions
What is the maximum TMR ratio achieved in your electrically controlled MTJ, and how does it compare to the best experimental values?
Our theoretical design achieves a TMR ratio of 1.1×10^4% (11000%), which is over two orders of magnitude higher than the best experimental value of 65% reported for CoFeB/MgO/CoFeB MTJs. This dramatic enhancement is attributed to the multiferroic barrier's ability to modulate spin-dependent tunneling efficiently, offering a clear advantage for practical memory applications.
How many distinct resistance states can your device support, and what is the physical mechanism enabling multi-state operation?
The device supports either 4 or 10 distinct resistance states, depending on the number of ferroelectric polarization and magnetization configurations. The multi-state operation arises from the coupling between ferroelectric polarization and magnetic order in the multiferroic barrier, which allows independent control of tunneling resistance via voltage pulses, without requiring magnetic fields.
What are the expected write energy and switching speed compared to conventional MTJs?
While specific write energy and speed are not detailed in the provided text, fully electrical control eliminates the need for current-induced magnetic switching, which typically consumes high energy. Voltage-driven switching in multiferroic barriers is expected to reduce write energy by orders of magnitude, potentially reaching femtojoule levels, and switching speeds could be in the nanosecond range, comparable to or faster than spin-transfer torque devices.
What are the main challenges for experimental realization of this theoretical design?
Key challenges include synthesizing high-quality multiferroic tunneling barriers with stable ferroelectric and magnetic ordering at room temperature, achieving atomically sharp interfaces to preserve spin polarization, and controlling the barrier thickness to maintain high TMR. Additionally, integrating such barriers with standard magnetic electrodes (e.g., CoFeB) requires careful lattice matching and thermal stability.
How does your device compare to other multi-state memory technologies in terms of scalability and CMOS compatibility?
Our device is fully electrically controlled, making it highly compatible with CMOS logic and suitable for scaling to sub-10 nm nodes. Unlike magnetoelectric co-controlled systems that require magnetic field generators, our design simplifies the peripheral circuitry, reducing area overhead. The high TMR ratio also ensures reliable readout even at scaled dimensions, where signal margins are critical.
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