• • Wafer-scale single-crystal TMDC growth on 150-mm wafers achieved for MoS2, WS2, MoSe2, and WSe2, eliminating grain boundaries and twin domains, which is critical for uniform carrier transport in sub-1 nm transistors.
• • Introduction of a lanthanum monolayer on sapphire reduces surface symmetry from P3 to P1, amplifying the energy difference between antiparallel domains by nearly two orders of magnitude, enabling unidirectional epitaxial alignment.
• • The epitaxial strategy is compatible with both thermal CVD and MOCVD, demonstrating versatility for industrial manufacturing processes.
• • Wafer-scale SHG, Raman, and PL mappings confirm excellent uniformity and quality across the entire 150-mm wafer, with statistical analysis of FET arrays showing tight distributions of key electrical parameters (Vth, SS, μ, Ion, Ion/Ioff) across five dies.