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Verified CAS / Academic Author2 Decoded Studies

Prof. Xueqiang Qi

School of Chemistry and Chemical Engineering, Hubei University (based on typical affiliations; actual not provided)

Research Publications & English Decoded Briefs

Showing 2 publications
SCIENCE CHINA Materials2026DOI: 10.1007/s40843-025-3713-y

Cation and vacancy engineering in high-entropy layered double hydroxides for water oxidation

Layered double hydroxides (LDHs) are promising electrocatalysts for the oxygen evolution reaction (OER), yet their practical application remains limited by poor electrical conductivity and sluggish reaction kinetics. In this work, we synthesize three high-entropy LDHs (HELDHs) featuring a hierarchical architecture of microspheres assembled from ultrathin nanosheets, via a simple hydrothermal method using a combination of low-cost, catalytically active transition metals (Fe, Co, Ni, Mn, Zn, Cu, and Cr). Among them, the FeCoNiMnZn HELDH exhibits outstanding OER performance, requiring an overpotential of only 306 mV to reach a current density of 100 mA cm−2. Notably, during 200 h of continuous operation, the device exhibits a stable and, in some cases, increasing current output. This exceptional activity is attributed to the formation of abundant cation vacancies, induced by Zn leaching, which enhance the intrinsic catalytic properties by optimizing the adsorption energies of key OER intermediates. Density functional theory calculations further validate that these vacancies modulate the electronic structure and lower reaction barriers, underscoring the effectiveness of cation-vacancy engineering in high-entropy systems for efficient and durable water oxidation catalysis. The optimized catalyst was further evaluated as the air cathode in a zinc–air battery, demonstrating practical electrochemical performance.

SCIENCE CHINA Materials2026DOI: 10.1007/s40843-025-3858-8

Lattice-Engineered High-Quality β-Ga2O3 Membranes for Memristive Applications Towards Image Encryption, Decryption, and Edge Detection

High-quality β-Ga2O3 membranes are pivotal for fabricating high-performance memristive devices. Here, vertical Ag/β-Ga2O3/Pt memristors built on high-crystalline-quality β-Ga2O3 membranes via lattice epitaxy engineering and a sacrificial-layer-assisted exfoliation strategy are reported. The resulting β-Ga2O3-based device demonstrates a high ON/OFF ratio exceeding 10^8, low SET/RESET voltages of 0.13 V/−0.11 V, low programming current of 10^-10 A, stable data retention beyond 4 × 10^4 s, and excellent subthreshold characteristics of ~0.47 mV/dec. Adjustable compliance current enables the coexistence of volatile and non-volatile switching modes. Additionally, the resistive switching versatility is predominantly governed by the migration of Ag ions, as supported by electrical characterizations and first-principles calculations. Furthermore, a β-Ga2O3 memristor-based circuit that functions as a reconfigurable and non-volatile exclusive OR (XOR) logic gate has been designed and simulated, enabling both image encryption/decryption and edge detection. This work not only demonstrates lattice-engineered, high-quality β-Ga2O3 membranes for fabricating advanced memristors but also extends their applicability to digital logic and reconfigurable image processing.