Developing flexible BaTiO3-based ceramic memristors through entropy engineering
Flexible memristors are pivotal for advancing neuromorphic computing in wearable electronics, yet the intrinsic brittleness of inorganic oxides poses a critical challenge. Here, we employ an entropy-engineering strategy to control the amorphization of oxide compositions, yielding a precisely controlled crystalline/amorphous microstructure in a BaTi0.25Sn0.25Hf0.25Zr0.25O3 thin film. This film withstands bending angles up to 180°, enabling an Au/BaTi0.25Sn0.25Hf0.25Zr0.25O3/ITO/Mica device that functions as a memristor. Entropy engineering increases oxygen vacancy concentration, imparting stable resistive switching behavior under both flat and bent conditions. The device exhibits exceptional endurance and reproducibility over multiple bending cycles, demonstrating a significant strategy for advancing flexible memristor technologies and holding promise for next-generation high-performance flexible electronics.