• • Entropy engineering enables a BaTi0.25Sn0.25Hf0.25Zr0.25O3 thin film to withstand bending angles up to 180°, overcoming the brittleness of inorganic oxides for flexible memristors.
• • The Au/BaTi0.25Sn0.25Hf0.25Zr0.25O3/ITO/Mica device exhibits stable resistive switching under both flat and bent conditions, with remarkable endurance and reproducibility over multiple bending cycles.
• • Increased oxygen vacancy concentration induced by entropy engineering imparts memristive behavior, enabling reliable switching without degradation under mechanical stress.
• • This work provides a scalable strategy for fabricating flexible oxide memristors, addressing the critical bottleneck of mechanical fragility in wearable neuromorphic systems.