SinoGreenTech Academic Portal
LZ
Verified CAS / Academic Author3 Decoded Studies

Prof. Linxing Zhang

University of Science and Technology Beijing

Co-Affiliations:School of Materials Science and Engineering, Beijing Institute of Technology

Research Publications & English Decoded Briefs

Showing 3 publications
SCIENCE CHINA Materials2026DOI: 10.1007/s40843-026-4464-9

Vortex-mediated piezoelectric enhancement in bulk ferroelectrics

Topological polarization textures have transitioned from theoretical predictions to experimental observations over two decades, yet their stabilization has remained largely confined to low-dimensional architectures where geometric confinement balances depolarization, strain, and gradient energies. Extending these textures into bulk ferroelectrics and quantitatively linking them to macroscopic electromechanical properties constitutes a persistent challenge. Wu et al. address this by engineering vortex and antivortex domains in bulk rhombohedral 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-30PT) crystals. Phase-field simulations reveal that increasing vortex core density from 6 to 27 μm⁻² enhances the dielectric constant (ε33/ε0) and piezoelectric coefficient (d33) by approximately 3.5-fold and 3.4-fold, respectively, correlating with increased polarization curl. Experimentally, a mechanically assisted direct-current poling (MDCP) strategy elevates vortex core density from 0.01 to 21 μm⁻², boosting d33 from 1380 to 1820 pC·N⁻¹ and ε33/ε0 from 4,630 to 6,230. This mechanically driven approach enables controllable manipulation of topological domain architectures in bulk crystals without nanoscale confinement, offering a scalable route for functional optimization. The work establishes bulk ferroelectrics as a platform for topology-mediated electromechanical design, introducing an additional degree of freedom for enhancing piezoelectric performance in three-dimensional crystals.

SCIENCE CHINA Materials2026DOI: 10.1007/s40843-026-4235-6

High Resistive Switching On/Off Ratio in Lu-Doped Hf0.4Zr0.6O2 Thin Films via Band Structure and Oxygen Vacancy Co-Strategy

Fluorite-structured oxides (HfO2, ZrO2) are promising for resistive random-access memory (RRAM) due to their scalability and tunable properties. However, achieving high resistive switching on/off ratios remains challenging. Here, we report a collaborative strategy combining Hf/Zr ratio optimization and Lu3+ doping to regulate band structure and oxygen vacancy concentration in Hf0.4Zr0.6O2 (LHZO) thin films. The resulting LHZO devices exhibit a resistive switching ratio of 8.4 × 10^4, two orders of magnitude higher than that of ZrO2 (1.2 × 10^3). Electrical characterization and synchrotron radiation photoemission spectroscopy reveal that Lu doping widens the bandgap to 4.95 eV, downshifts the valence band, and introduces defect states, collectively suppressing p-type conductivity and reducing off-state leakage current. Simultaneously, Lu3+ doping enriches oxygen vacancies, stabilizing ohmic conductive filaments in the on-state. This co-optimization of band structure and oxygen vacancies effectively enhances insulating properties in the high-resistance state and ohmic conductivity in the low-resistance state, leading to superior resistive switching performance with robust retention (>10^4 s). Our findings establish a fundamental strategy for tailoring electronic properties of doped HfZrO2 thin films toward high-performance RRAM applications.

SCIENCE CHINA Materials2026DOI: 10.1007/s40843-025-3625-3

Strain Modulation of ZrO2 Ferroelectric Thin Films for Achieving Superior Polarization

Zirconia (ZrO2)-based fluorite ferroelectric materials are promising for nonvolatile memory and logic devices due to their CMOS compatibility and cost advantages over hafnium oxide (HfO2). However, the metastable nature of the ferroelectric orthorhombic phase (o-phase) hinders practical application. Here, we report the strain-mediated stabilization of the ferroelectric o-phase in ZrO2 thin films grown on niobium-doped strontium titanate (NSTO) substrates with different crystallographic orientations via chemical solution deposition. Systematic structural and ferroelectric characterization, combined with simulation, reveals that substrate orientation controls in-plane tensile strain, selectively promoting epitaxial growth of the o-phase. The ZrO2 film on NSTO(110) exhibits the highest o-phase content, achieving a remanent polarization (2Pr) of 92.64 μC/cm², which remains as high as 88.54 μC/cm² after resistive-capacitive (RC) delay calibration. The device shows endurance of approximately 10^7 cycles with favorable fatigue characteristics. X-ray absorption spectroscopy (XAS) further indicates distortion of Zr-O tetrahedra, providing microscopic insight into the ferroelectricity. This work presents a novel strategy for property tuning of ZrO2 films and supports their application in storage and logic devices.