High Resistive Switching On/Off Ratio in Lu-Doped Hf0.4Zr0.6O2 Thin Films via Band Structure and Oxygen Vacancy Co-Strategy

• • Achieved resistive switching on/off ratio of 8.4 × 10^4 in Lu-doped Hf0.4Zr0.6O2 (LHZO) thin films, two orders of magnitude higher than ZrO2 (1.2 × 10^3), enabling more reliable read operations in memory arrays. • • Bandgap widened to 4.95 eV via Lu doping, suppressing off-state leakage current by reducing p-type conductivity, critical for lowering power consumption in high-resistance state. • • Lu3+ doping enriches oxygen vacancies, stabilizing ohmic conductive filaments in low-resistance state, ensuring consistent on-state conductivity and device uniformity. • • Retention exceeds 10^4 s, demonstrating non-volatile memory stability suitable for long-term data storage applications.