Lattice-Engineered High-Quality β-Ga2O3 Membranes for Memristive Applications Towards Image Encryption, Decryption, and Edge Detection
High-quality β-Ga2O3 membranes are pivotal for fabricating high-performance memristive devices. Here, vertical Ag/β-Ga2O3/Pt memristors built on high-crystalline-quality β-Ga2O3 membranes via lattice epitaxy engineering and a sacrificial-layer-assisted exfoliation strategy are reported. The resulting β-Ga2O3-based device demonstrates a high ON/OFF ratio exceeding 10^8, low SET/RESET voltages of 0.13 V/−0.11 V, low programming current of 10^-10 A, stable data retention beyond 4 × 10^4 s, and excellent subthreshold characteristics of ~0.47 mV/dec. Adjustable compliance current enables the coexistence of volatile and non-volatile switching modes. Additionally, the resistive switching versatility is predominantly governed by the migration of Ag ions, as supported by electrical characterizations and first-principles calculations. Furthermore, a β-Ga2O3 memristor-based circuit that functions as a reconfigurable and non-volatile exclusive OR (XOR) logic gate has been designed and simulated, enabling both image encryption/decryption and edge detection. This work not only demonstrates lattice-engineered, high-quality β-Ga2O3 membranes for fabricating advanced memristors but also extends their applicability to digital logic and reconfigurable image processing.