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FQ
Verified CAS / Academic Author2 Decoded Studies

Prof. Fangzhu Qing

University of Electronic Science and Technology of China

Co-Affiliations:State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China

Research Publications & English Decoded Briefs

Showing 2 publications
SCIENCE CHINA Materials2026DOI: 10.1007/s40843-026-4319-x

Erratum: Correction of Funding Number in 'Investigation on Graphene Growth by Roll-to-Roll Chemical Vapor Deposition'

This erratum corrects an error in the Acknowledgments section of the original article 'Investigation on graphene growth by roll-to-roll chemical vapor deposition' published in Science China Materials, Vol. 65, Issue 4, page 1042, 2022. The authors regret that the funding number (No. (2021)105) for the Shenzhen Science and Technology Program was incorrectly used. The correct funding number is No. KQTD20200820113010022. The authors apologize for any inconvenience caused. This correction does not affect the scientific content, results, or conclusions of the original paper. The original research focused on the kinetics of graphene growth via roll-to-roll chemical vapor deposition (CVD), a scalable method for producing high-quality graphene films. The study addressed challenges in continuous manufacturing, such as uniformity, growth rate, and defect control, and provided insights into optimizing process parameters for industrial-scale production. The erratum ensures accurate attribution of funding sources, maintaining the integrity of the research record.

SCIENCE CHINA Materials2026DOI: 10.1007/s40843-025-3862-x

Isotope-Engineered Hexagonal Boron Nitride Films Synthesized by Plasma-Enhanced Chemical Vapor Deposition from Elemental Boron and Nitrogen Precursors

Hexagonal boron nitride (hBN) is indispensable for next-generation electronics and quantum technologies, yet controlled synthesis of isotopically engineered hBN with macroscopic scalability and atomic-level precision remains challenging. Here, we present a plasma-enhanced chemical vapor deposition (PECVD) method using elemental boron (B) and nitrogen (N) precursors to achieve wafer-scale growth and precise isotopic control of hBN films. High-quality hBN films are synthesized on Cu substrates via optimized B evaporation and N2 plasma activation. The growth mechanism involves an oxygen-mediated pathway for B transport and a layer-by-layer (Frank-van der Merwe) mode for multilayer formation. By employing isotopically enriched B powders (10B and 11B) and N2 gases (14N2 and 15N2), we demonstrate tunable isotopic compositions with phonon mode shifts quantitatively matching harmonic oscillator predictions. Furthermore, we realize unprecedented in-plane h10BN-h11BN heterostructures through dynamic B source switching during growth. This PECVD strategy establishes a transformative synthesis platform merging industrial-scale production capacity with atomic-scale isotopic precision, enabling new opportunities to engineer thermal transport, optical response, and quantum coherence in two-dimensional materials.