• • Zn doping yields a 106-fold increase in excitatory post-synaptic current under 254 nm illumination compared to undoped Ga2O3, directly enabling high-sensitivity optoelectronic synaptic response for low-light neuromorphic hardware.
• • Synaptic event energy consumption reaches 28 fJ (electrical) and 2 nJ (optical), positioning ZGO devices for ultra-low-power edge computing where energy budgets are constrained below picojoule thresholds.
• • The multi-layer perceptron simulation achieves 90.74% accuracy in handwritten digit recognition and retains 76.18% accuracy under 50% noise, demonstrating robust fault tolerance critical for real-world deployment in noisy industrial environments.
• • Persistent photoconductivity in ZGO thin films is attributed to abundant oxygen vacancies, providing a tunable defect engineering pathway to optimize synaptic plasticity and retention without compromising device scalability.