• • SCN additive incorporation into BDAMAn−1PbnI3n+1 (n = 3) films yields vertically aligned [PbI6]4− octahedral layers and superior crystallinity, enabling columnar grains with minimal grain boundaries; this microstructure directly reduces ion migration heterogeneity, a prerequisite for linear conductance updates in crossbar arrays.
• • Moisture stability of SCN-modified DJ HP films reaches 7 months in ambient air, compared to 28 days for randomly oriented films—a 7.5-fold improvement. This threshold is critical for commercial neuromorphic hardware, where device lifetime must exceed 5 years under uncontrolled humidity.
• • Potentiation and depression (P&D) characteristics are nearly perfectly linear and symmetric, with homogeneous migration of charged interfacial ions. This linearity minimizes weight update errors in analog neural network training, directly impacting inference accuracy and training convergence rates.
• • First-principle DFT calculations identify the absence of van der Waals gaps between inorganic perovskite layers as the key structural feature governing resistive switching. This mechanistic insight provides a design rule for eliminating nonlinear conductance artifacts in 2D HP memristors.