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Protected by Google reCAPTCHA v3.•Privacy•Terms Key Findings in This Report
• • Sliding ferroelectricity enables polarization switching with ultralow energy barriers, achieving endurance over millions to trillions of cycles and sub-nanosecond reversal times, far exceeding conventional ferroelectrics.
• • Rhombohedral-stacked MoS2 bilayers exhibit nanosecond ferroelectric switching of intralayer excitons via Coulomb engineering, enabling ultrafast optoelectronic modulation.
• • Non-volatile electrical polarization switching via domain wall release in 3R-MoS2 bilayer achieves stable retention, critical for memory applications.
• • Combining intrinsic and sliding-induced polarizations yields multiple polarization states, offering multistate logic and memory capabilities.