• • NaBH4-assisted chemical etching introduces abundant Te vacancies in Bi2Te3, enhancing Zn2+ diffusion coefficient to 3.98×10−11 cm2 s−1, a ~2 orders of magnitude improvement over pristine Bi2Te3, enabling fast charge/discharge kinetics critical for high-power applications.
• • H-Bi2Te3 delivers a specific capacity of 325 mAh g−1 at 0.1 A g−1, surpassing many reported TMT cathodes, and retains 217 mAh g−1 at 1 A g−1, demonstrating excellent rate capability for grid-scale storage.
• • Exceptional long-term stability: 70 mAh g−1 retained after 10,000 cycles at 1 A g−1, corresponding to ~32% capacity retention, indicating robust structural integrity and reversible Zn2+ storage, essential for commercial viability.
• • Te vacancies refine the band structure and increase electrical conductivity, as confirmed by DFT calculations, directly addressing the sluggish kinetics and poor rate performance that have hindered TMT cathodes in AZIBs.