• • Lasing threshold reduced from 15.3 to 8.6 μJ/cm² (44% decrease) under optical-electrical co-excitation at 2.98 kA/cm², enabling lower power consumption for integrated photonic devices.
• • AuNPs decoration enables current injection density of 2.98 kA/cm², a critical step toward electrical pumping, overcoming previous limitations in carrier injection efficiency.
• • AuNPs accelerate hot-carrier cooling, reducing non-radiative recombination losses and Joule heating, as evidenced by stable operation under ambient conditions and resistance to aging and humidity.
• • Progressive reduction of lasing threshold with increasing electrical assist fraction demonstrates synergistic optical-electrical control, offering tunable performance for practical laser diodes.