Sub-thermionic organic thin-film tunnel transistors for beyond-thermionic electronics

• • Subthreshold swing (SS) below 60 mV/dec at room temperature, breaking the Boltzmann limit; enables ultra-low-power operation for flexible electronics. • • Interfacial molecule decoupling using BPE-PTCDI interlayer between MoO3 and C8-BTBT reduces interfacial gap states and Fermi-level pinning, enabling efficient band-to-band tunneling. • • OTFTTs operate at low supply voltages (e.g., V_GS < 60 mV for band-to-band tunneling), reducing power consumption in integrated circuits. • • Demonstrated applications in electrooculography (EOG) and photoplethysmography (PPG) sensor interfaces, showing practical viability in biomedical sensing.