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Stress-Guided Anisotropic Etching of MoS2 Nanostructures with Spatial Control over Edge Structure and Morphology

Authors: Wenhui Sun; Shuiyan Cao; Wenfa Chen; Ying Liu; Siyuan He; Yuwei Zhang; Tao Zhou; Junchen Wu; Pin Lyu; Jinguo Liu; Dongyang Wan; Mingming Jiang; Caixia Kan; Shisheng Li; Yanpeng Liu

DOI: 10.1007/s40843-025-4097-3Status: Verified Translated Edition
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Key Findings in This Report

• • Stress-guided anisotropic etching produces MoS2 nano-ribbons with widths inversely proportional to applied stress magnitude; precise stress control enables width tunability for nanodevice fabrication. • • Etched edges are predominantly Mo-zigzag terminated, yielding a ~8.0-fold photoluminescence enhancement, critical for optoelectronic applications requiring high quantum efficiency. • • Edge morphology (straight vs. serrated) is determined by the angle between stress direction and crystallographic orientation, enabling deterministic edge engineering for catalytic and electronic applications. • • Biaxial stressing yields well-defined nano-square arrays, demonstrating a scalable, template-free patterning method for 2D materials, overcoming limitations of lithography and CVD.
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