• • At an oxygen vacancy concentration of 38.88%, the Schottky barrier height drops to 0.54 eV, enabling a responsivity of 1880 mA/W; however, this comes at the cost of a degraded photo-to-dark current ratio (PDCR) and slower response speed, limiting its use in high-sensitivity detection applications.
• • Reducing the oxygen vacancy concentration to 30% increases the barrier height to 0.70 eV, which suppresses dark current to 28.4 pA and boosts detectivity to 1.44×10^13 Jones and PDCR to 3.42×10^4, making it suitable for low-noise, high-sensitivity deep-UV photodetection.
• • The S3 device exhibits a higher conductance of 5.80×10^-8 S and a carrier concentration of 1.97×10^16 cm^-3, but its abundant oxygen vacancies trap electrons, resulting in slower photo-response speed, which is detrimental for high-speed communication and imaging systems.
• • The S5 device, with a larger barrier height and wider depletion region, demonstrates superior detection sensitivity (PDCR of 3.42×10^4) and faster response speed, highlighting that barrier height engineering can effectively balance responsivity and detectivity for specific application requirements.