Room-Temperature Sensitive Electromechanical Magnetization Reversal with Modulation Capability Approaching 100%

• • Achieved 96.5% suppression of coercive field in Fe3GaTe2/α-In2Se3 heterostructure at room temperature, enabling near-complete magnetic reversal with minimal voltage, critical for ultra-low-power spintronic devices. • • Peak modulation sensitivity of ~8.1 mT V−1, surpassing existing van der Waals magnetoelectric systems, indicating high efficiency for voltage-controlled magnetic switching. • • Voltage-induced tensile strain of ~1.42% (Raman shift 1.7 cm−1) is polarity-independent, confirming a strain-mediated mechanism that ensures robust operation regardless of bias direction. • • DFT calculations show strain reduces magnetic anisotropy energy, directly linking mechanical deformation to coercivity reduction, providing a design rule for strain-engineered magnetic control.