• • Active switching area of only 2 μm × 2 μm enables ultracompact BEOL integration without sacrificing valuable chip area in GaN-on-SiC MMICs, directly addressing the footprint constraint that limits conventional RF switch scaling.
• • Pristine capacitance of approximately 24.5 fF and leakage currents below 100 fA at 4 V satisfy the low off-state capacitance requirement for mmWave operation, suppressing unwanted high-frequency transmission while maintaining low on-state resistance of only a few ohms to minimize signal loss.
• • Cross-sectional TEM reveals a well-defined ~8-nm layered hBN structure before electrical stressing and a filament-like pathway with Au penetration after switching to the low-resistance state, confirming a conductive-bridge switching mechanism that is essential for reliable non-volatile operation.
• • High-temperature non-volatility and transistor-assisted programming demonstrated in a 1T1M cell configuration enable continuous RF attenuation, selective signal routing, and frequency-reconfigurable resonators, providing a pathway to energy-efficient dynamically adaptable RF front ends without continuous bias.