Optoelectronic Memristors Based on ZnS-Passivated CdZnSe Quantum Dots for Neuromorphic Synaptic Emulation Enabling Information Encryption

• • ZnS passivation extends average carrier lifetime from 12.3 ns to 28.7 ns (TRPL tri-exponential fit), reducing nonradiative recombination and improving quantum yield—critical for stable optoelectronic operation. • • The fast decay component (τ1 ≈ 1.2 ns) intensity proportion drops from 45% to 18%, confirming effective defect passivation, which directly correlates with reduced leakage currents and enhanced device reliability. • • Memristors achieve an ON/OFF ratio >10^3, endurance >10^3 cycles, and retention >10^4 s, meeting minimum requirements for non-volatile memory and synaptic weight storage in neuromorphic arrays. • • Under 365 nm UV, PPF index reaches 180% at 50 ms interval, demonstrating light-tunable short-term plasticity essential for optical neuromorphic modulation and secure information encryption.