Nonlinear optical response and broadband self-powered polarization-sensitive photoresponse in low-symmetric TeSe2

• • Room-temperature field-effect mobility of 122 cm2 V-1 s-1 in p-type TeSe2 establishes a viable pathway for high-speed, low-power complementary logic circuits, directly addressing the mobility ceiling of amorphous oxide semiconductors (~10 cm2 V-1 s-1). • • Self-powered photoresponsivity of 77.3 mA/W at 532 nm eliminates external bias requirements, reducing dark current and enabling deployment in battery-less sensor networks where power budgets are constrained to sub-milliwatt levels. • • Broadband polarization-sensitive detection from 405 nm to 1064 nm covers the visible to near-infrared spectral window critical for free-space optical communication and machine vision, outperforming narrowband Si-based polarimeters that require bulky optical filters. • • Gate-voltage modulation of the linear photogalvanic effect provides an electrical tuning knob for polarization discrimination, enabling dynamic reconfiguration of responsivity without mechanical rotation of optical components, a key requirement for on-chip polarimetric imaging.