Multiscale Ordered Defect Design for Tailoring Ferroelectric Phase Stability and Switching Kinetics in Hafnia Ferroelectrics

• • Endurance exceeding 10^12 cycles is achievable through ordered defect architectures, addressing the reliability bottleneck for non-volatile memory applications. • • Ultrahigh remanent polarization in Ce-doped HfO2 thin films is realized via strain engineering, demonstrating the effectiveness of strain-mediated defect control. • • Interface engineering in Hf0.5Zr0.5O2 ultrathin films yields fatigue-free ferroelectricity, enabling stable operation over extended cycling. • • Reducing coercive field and improving endurance in epitaxial Hf0.5Zr0.5O2 films is achieved via novel interface layer approaches, enhancing switching efficiency.