• • SnS2 bulk crystals achieve bending strains exceeding 20% and compression strains exceeding 45% without fracture, demonstrating superior plasticity for flexible electronics and mechanical forming processes.
• • Tensile fracture strains reach up to ~12% (range 9%–16%), indicating moderate ductility under tension, which is critical for device reliability under mechanical stress.
• • Multiple deformation units—layer segments, interlayer/cross-layer slip, twisting, and twinning-like structures—are identified via S/TEM, providing multiple strain-release pathways that underpin the observed plasticity.
• • The combination of weak interlayer vdW interactions and relatively ionic, weak intralayer Sn–S bonds contributes to the material's softness and plasticity, offering design principles for other vdW crystals.
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