• • SrTiO3 interlayer increases average carrier lifetime from 45.20 ns (control) to 60.72 ns, with slow decay component rising from 47 ns to 54 ns, indicating reduced trap-assisted non-radiative recombination and improved charge separation.
• • Power conversion efficiency (PCE) improves from 19.95% to 22.19%, and open-circuit voltage (VOC) reaches 1.17 V, narrowing the gap to the theoretical limit of ~1.3 V for MAPbI3 PSCs.
• • Unencapsulated devices with SrTiO3 retain ~92% of initial PCE after 500 h at 25% relative humidity and 25 °C, versus 74% for control, demonstrating enhanced operational stability.
• • Minimal lattice mismatch between SrTiO3 and MAPbI3 promotes high-quality perovskite crystallization with reduced defect density, addressing a key barrier to scalable manufacturing of stable PSCs.